Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO3/γ-Fe2O3]/FTO device

Sun, Bai; Y, Liu; Zhao, Wenxi; Chen, Peng

doi:10.1039/c4ra14605k

Cited by 75 publications

(45 citation statements)

References 57 publications

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“…The absolute values of V Reset and V Set increase with the increasing power density of illumination. That is to say that the illumination can control the resistive switching, which is consistent with the reported results in previous literature [43][44][45][46][47].…”

Section: Characterizationssupporting

confidence: 94%

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Preparation and light-controlled resistive switching memory behavior of CuCr2O4

Sun

Jia

et al. 2015

J Sol-Gel Sci Technol

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In this work, CuCr 2 O 4 nanoparticles were successfully prepared by an improved hydrothermal process, and a resistive switching memory behavior with Ag/ CuCr 2 O 4 /fluorine-doped tin oxide structure is demonstrated. Specially, the resistive switching memory characteristics can be controlled by white-light illumination. The device can maintain superior stability over 100 cycles with an OFF/ON-state resistance ratio of about 10 3 at room temperature. This study is useful for exploring the promising light-controlled resistive switching memory device in the development of resistive switching randomaccess memory. Graphical Abstract We demonstrate a resistive switching device based on Ag/CuCr 2 O 4 /FTO structure, and the device shows light-controlled resistive switching memory characteristics.

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Section: Characterizationssupporting

confidence: 94%

“…This bipolar resistive switching behavior should be resulted from the trapped and detrapped charge in the Schottky-like depletion layer [48][49][50][51][52][53][54]. The white light can modulate the resistive switching behavior by a large number of photogenerated charges [44][45][46][47].…”

Section: Resultsmentioning

confidence: 98%

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

Sun

Jia

et al. 2015

J Sol-Gel Sci Technol

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“…Ungureanu firstly reported a light-controlled resistive switching memory in Pd/Al 2 O 3 /SiO 2 device [13], and Adachi and Park have also added the light as extra control parameter in the switching memory device based on ZnO nanorods [14,15]. The light-controlled resistive switching behavior provides the potential for nonvolatile light-controlled memory device [16][17][18], which may be a promising trend of the development of information science.…”

Section: Introductionmentioning

confidence: 97%

Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

Sun

Jia

et al. 2015

Solid State Communications

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“…[21][22][23][24][25][26][27][28] The formation of the filament is attributed to the presence of foreign atoms, especially coming from electrodes or intrinsic defects in the active material. Various perovskite materials are explored for RRAM application and recently bismuth ferrite is identified as a potential room temperature magnetodielectric material [30][31] . The magnetodielectric properties of bismuth ferrite may provide an additional degree of freedom to control the magnetic order parameter by external electric field or vice-versa.…”

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confidence: 99%

Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films

Kumari

Varun

Tiwari

et al. 2018

Superlattices and Microstructures

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BiFeO 3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO 3 /FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with the maximum I on /I off ~ 450, and low set and reset voltages ~ 1.1 V and -1.5 V, respectively. The devices are stable against on-off cycles with ~ 10 4 s retention time without any significant degradation. The variations in the set and reset voltages are 0.4 V and 0.6 V, respectively. We found that ohmic and trap-controlled space charge limited conductions are responsible for low and high resistance states, respectively. The resistive switching mechanism is attributed to the formation and rupturing of the metal filament during the oxidation and reduction of Ag ions for the set and reset states. Introduction:The resistive random access memory (RRAM) based non-volatile memory devices are attracting attention due to their simple device geometry, high switching speed, low power consumption, longer retention time and switching endurance in conjunction with the possibilities for scaling up towards practical applications. 1-3 This works on the principle of resistive switching, which can be realized in simple metal-insulator-metal (MIM) capacitorlike structures. The RRAM device switches between conducting and non-conducting states by manipulating external stimuli, such as electric field. 4-6 These devices are explored in numerous transition metal oxides and perovskites like HfO 2 7 , TiO 2 8 , Al 2 O 3 9 , Ta 2 O 5 10 ,

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Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO₃/γ-Fe₂O₃]/FTO device

Abstract: We report resistive switching behavior in a Ag/[BiFeO3/γ-Fe2O3]/FTO device, which can be controlled simultaneously by voltage pulses, magnetic-field and white-light.

Cited by 75 publications

References 57 publications

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films

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