Macroscopically and atomically smooth YBa2Cu3O7 film grown by reactive rapid sequential pulse laser deposition

Watanabe, Yoshihisa; Tanamura, Mitsuru; Asami, Harumi; Matsumoto, Yasuaki; Seki, Y.; Matsumoto, Shinya

doi:10.1016/0921-4534(94)91513-x

Cited by 6 publications

(4 citation statements)

References 2 publications

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“…Possibly related phenomena are observed in the leakage current of the ferroelectric. 20,21 It is well known that bulk ferroelectrics contain free charges that are emitted during the process of the poling. The resultant current is called as an absorption current.…”

Section: Discussion: the Multidomain Effect The Stability Of Spamentioning

confidence: 99%

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Theoretical stability of the polarization in a thin semiconducting ferroelectric

1998

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The size effect in ferroelectrics is examined by considering the semiconductivity of the ferroelectric. This approach is applied to a theoretical investigation of the stability of the spontaneous polarization in a ferroelectric film on a semiconductor using a homogeneous Ginzburg-Landau theory. The band structure in the ferroelectric/insulator/semiconductor is rigorously incorporated in the theory, as if for a conventional semiconductor heterostructure such as GaAs/͑Ga,Al͒As. The carriers generated in the ferroelectric are found to change drastically the stability of the spontaneous polarization and its size effect. Numerical and simple analytical results are presented for BaTiO 3 and, mostly, for PbTiO 3. The spontaneous polarization in a single-domain ferroelectric on a semiconductor is shown to be bistable and induce a semiconductor space charge D. The value of D is a tiny fraction of the spontaneous polarization and agrees with experimentally estimated values. Namely, the experimental quasiequilibrium D values are mostly intrinsically limited by the heteroband structure, not by the technological difficulties. Moreover, the D value for a finite insulator thickness was found to be mainly determined by the insulator thickness and the semiconductor properties of the ferroelectric, and was relatively insensitive to the ordinary ferroelectric properties and the trap densities at the interface. The theory forecasts possible limitations of the transistors using this structure. Nonetheless, a long retention of the semiconductor space-charge D by a very thin ferroelectric can be realized by the advancement of the technology. Additionally, the stability of very thin ferroelectrics on semi-insulating substrates and the switching of ferroelectrics on parent materials of the high-T c superconductors are successfully explained.

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Section: Discussion: the Multidomain Effect The Stability Of Spamentioning

confidence: 99%

“…19 Similar phenomena were also observed in epitaxial F/S heterostructures. 20,21 Similarly, the space-charge effect, i.e., Schottky barrier at the metal/ferroelectric interface is considered to be one of the mechanisms that intrinsically reduce the dielectric constant of very thin high-dielectric films like SrTiO 3 and Pb͑Zr,TiO͒O 3 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical stability of the polarization in a thin semiconducting ferroelectric

1998

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“…Recently, a transport property related to this possibility was reported in epitaxial ferroelectric films. [10][11][12][13] The current through ferroelectric exhibit a diode property tunable by an external voltage bias. However, its origin has yet been unidentified, although two mechanisms, the charge injection and the P switching, were proposed.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport throughPb(Zr,Ti)O3p

Watanabe
¹

1999

Phys. Rev. B
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147
4
60
0

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Current through ͑Pb,La͒͑Zr,Ti͒O 3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/ ͑Pb,La͒͑Zr,Ti͒O 3 /SrTiO 3 :Nb but not in metal/͑Pb,La͒͑Zr,Ti͒O 3 /͑La,Sr͒ 2 CuO 4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface ͑p: hole conduction type, n: electron conduction type͒. The analysis suggests that an intrinsically inhomogeneous P (ٌ P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region. ͓S0163-1829͑99͒09917-8͔

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“…Details of surface morphology and crystallographic properties of the heterostructures using STO, STO:Nb, and LSCO as well as their deposition conditions are described elsewhere. 8,10 The heterostructures were grown mostly ex situ by a pulse laser deposition, because no quantitative difference in leakage current was observed between in situ and ex situ grown heterostructures. The thicknesses of the conductive layer and the ferroelectric layer were typically around 1000 and 2000 Å, respectively.…”

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Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures
Watanabe
¹

1995
Applied Physics Letters
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64
2
32
0
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Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.

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Macroscopically and atomically smooth YBa2Cu3O7 film grown by reactive rapid sequential pulse laser deposition

Cited by 6 publications

References 2 publications

Theoretical stability of the polarization in a thin semiconducting ferroelectric

Theoretical stability of the polarization in a thin semiconducting ferroelectric

Electrical transport throughPb(Zr,Ti)O3p

Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures

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