Macro/microcavity method and its application in modeling chemical vapor deposition reaction systems

Determination of the surface reactivity of growth species in the AP-MOCVD of ZnO from DEZ and H2O and thermal analysis of the “captured” intermediate species

“…Since the surface reactivity is expected to increase with temperature according to Arrhenius type equation, this decrease in surface reactivity at higher temperatures seems to indicate a change in the chemical formula of the growth species. In order to quantify the surface reactivity, we modify the growth equation initially developed by Kim, Egashira and Komiyama [16][17][18], to describe the growth rate profile in a micron-sized cavity.…”

“…Therefore, a large number of parameters need to be controlled in order to obtain the desired film properties and thickness uniformity. Because of this, the mechanisms of film growth and the identification of growth species in the preparation of various films by CVD have received considerable attention [11][12][13][14][15][16][17][18]. However, the ZnO CVD system is not yet well understood and there are few reports regarding the growth species.…”

Kinetic modeling of tungsten silicide chemical vapor deposition from WF6 and Si2H6: Determination of the reaction scheme and the gas-phase reaction rates

“…The rate constant, k, can be calculated from the deposition-rate profile, which corresponds to either the mass-transport coefficient, k d , or surface reaction-rate constant, k s , depending on rate-determining step in the reaction mechanism Hong et al, 2000). If the surface reaction is the rate-determining step of the deposition process, k s can be calculated from k, using the following relation:…”

“…We developed a methodology for designing industrial scale reactors using reaction rate and reaction schemes obtained with a laboratory scale reactor (Egashira et al, 1996;Chae et al, 1998Chae et al, , 1999Hong et al, 2000;Komiyama et al, 1999;Saito et al, 2006a,b). The important results from the previous works on the WF 6 /SiH 4 process include: (1) the molecular size of the growth species in the WF 6 /SiH 4 process is about 0.5 nm, which is approximately the size of a WF 6 molecule.…”

Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6

“…It is well known that the step coverage decreases as either the aspect ratio of trenches increases or as the sticking probability of the depositing species increases [13,25,26]. A theoretical relationship between the trench aspect ratio and sticking probability of film-forming species has been established [13,25,26]. When the mean freepath of film-forming species is much longer than the trench width (W), the step coverage for a trench of width W and depth L can be described as…”