Luminescent ZnS:Cu films prepared by chemical methods

Svechnikov, S. V.; Zavyalova, L. V.; Roshchina, N. N.; Rodionov, V. N.; Khomchenko, V. S.; Berezhinskii, L. I.; Prokopenko, I. V.; Litvin, P. M.; Литвин, Оксана Степанівна; Kolomzarov, Yu.; Tsyrkunov, Yu. A.

doi:10.1134/1.1317569

Cited by 21 publications

(5 citation statements)

References 6 publications

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“…The study of the morphology of the film surface is important as it indicates the capacity of steady emission. [ 5 ] SEM images indicated a major contribution of the dopant in the surface modification of Mg 0.2 Zn 0.8 S. SEM images for doped films showed spherical grains on the surface (Figure 3). The grain size distribution was found to be inhomogeneous.…”

Section: Resultsmentioning

confidence: 99%

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Spectroscopic investigation of Cu_xMg_0.2−xZn_0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Chattopadhyay

Misra

et al. 2021

Luminescence

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The effect of copper (Cu) doping on the luminescent properties of the spray deposited Mg0.2Zn0.8S thin films were investigated for the first time. The Mg0.2Zn0.8S film is an excellent luminescent material with strong blue emissions. In the current investigation, we doped Mg0.2Zn0.8S with Cu by taking (Cu + Mg) as 20 at% by keeping other element ratios constant. Among the different samples in the series, Cu0.05Mg0.15Zn0.8S has shown promising results with dark blue emission. Also, these films showed good structural formation with lower or no other impurities, which is evident from the X‐ray diffraction (XRD). Scanning electron microscopy (SEM), energy‐dispersive X‐ray spectroscopy (EDX) and atomic force microscopy (AFM) confirmed the improved material quality of Cu0.05Mg0.15Zn0.8S as compared to the pristine. Raman and X‐ray photoelectron spectroscopy (XPS) studies have been carried out for the samples. Various defects induced in the films were investigated by recording the photoluminescence (PL) spectra and Cu:(Mg0.2Zn0.8S) films exhibited the capability to produce dilute blue luminescence by absorbing ultraviolet (UV) light. The Cu0.05Mg0.15Zn0.8S film showed promising material property, which is suitable for light‐emitting diode (LED) applications.

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Section: Resultsmentioning

confidence: 99%

“…Many doped ZnS semiconductors have been reported. Manganese (Mn), [ 1 ] chromium (Cr), [ 2 ] magnesium (Mg), [ 3 ] indium (In), aluminium (Al), [ 4 ] copper (Cu), [ 5 ] cadmium (Cd), [ 6 ] selenium (Se), [ 7 ] etc. have been doped on to ZnS that is suitable for LED and other electrooptic devices.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic investigation of Cu_xMg_0.2−xZn_0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Chattopadhyay

Misra

et al. 2021

Luminescence

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“…Within the transparent conducting material regime, the hole conduction which makes the conductivity temperature independent is due to substitutional incorporation of Cu onto Zn sites [9]. Various synthesis methods of ZnS:Cu thin films, such as chemical vapor deposition (CVD) [10], the sol-gel method [11], RF magnetron sputtering [6] and metal-organic chemical vapor deposition [12] have been explored. In this paper, we found controllable growth for good quality ZnS:Cu thin films by low-temperature sulfidation.…”

Section: Introductionmentioning

confidence: 99%

Influence of copper content and pre-treatment on the structure of ZnS:Cu thin films by sulfidation

et al. 2018

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ZnS:Cu thin films were prepared at 440 • C by sulfuring Zn:Cu thin films which were grown by magnetron sputtering with zinc targets covered with different areas of copper foil to vary the Cu content. As the area of copper increases, the morphology of the ZnS:Cu thin films becomes more uniform and dense. Owning to lower mobility of copper atoms that inhibit the mass aggregation of zinc, the aggregation in Zn:Cu films gradually disappears. After sulfuring the thin films with higher copper content, the concentration of both surface-holes and defects decreases. Annealing the prefabricated Zn:Cu thin films can improve the quality of ZnS:Cu thin films. Notably, the increasing Cu content contributes more to the quality of ZnS:Cu thin films than annealing. Among the samples with increasing cooper content, the defects in the thin films tends to be of only one type.

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“…First of all, we note the research on its luminescence [1][2][3][4][5][6][7][8][9][10][11][12]. At present, numerous properties of the luminescence centers formed with manganese [1][2][3][4][5][6][7][8][9] and other impurities [10][11][12] in ZnS have been studied so well that it is possible to use luminescence techniques for nondestructive monitoring of the behavior of impurity atoms in ZnS. This, in turn means that ZnS:Mn can be used as a model material for studying a whole series of processes in solids, especially since some questions regarding the diffusion and imbedding of manganese atoms in the material still remain unanswered.…”

Section: Introductionmentioning

confidence: 99%

Diffusional relaxation in ZnS after thermal doping at 800°C

Bacherikov

Optasyuk

2010

J Appl Spectrosc

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Photoluminescence spectra of powdered ZnS thermally doped with MnS are studied. Correlations are demonstrated between variations in the luminescence characteristics of ZnS:Mn, on one hand, and some features of radiation center formation and the diffusion of Mn in ZnS after processing, on the other. It is found that after manganese doping at a temperature (T = 800 o C) lower than the phase transition temperature of ZnS, relaxation processes owing to diffusion of Mn in ZnS take place in the material over times as long as 6⋅10 3 h. It is shown that 6⋅10 3 h after doping the α-MnS phase is essentially completely dissolved in the volume of the ZnS. Diffusion of Mn in powdered ZnS is found to occur via several channels, rapid diffusion along interior boundaries and slow diffusion via interstitial space, which indicates the existence of different activation energies for diffusion of Mn depending on its localization within the ZnS lattice.

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Luminescent ZnS:Cu films prepared by chemical methods

Cited by 21 publications

References 6 publications

Spectroscopic investigation of Cu_xMg_0.2−xZn_0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Spectroscopic investigation of Cu_xMg_0.2−xZn_0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Influence of copper content and pre-treatment on the structure of ZnS:Cu thin films by sulfidation

Diffusional relaxation in ZnS after thermal doping at 800°C

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Luminescent ZnS:Cu films prepared by chemical methods

Cited by 21 publications

References 6 publications

Spectroscopic investigation of CuxMg0.2−xZn0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Spectroscopic investigation of CuxMg0.2−xZn0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Influence of copper content and pre-treatment on the structure of ZnS:Cu thin films by sulfidation

Diffusional relaxation in ZnS after thermal doping at 800°C

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Spectroscopic investigation of Cu_xMg_0.2−xZn_0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications

Spectroscopic investigation of Cu_xMg_0.2−xZn_0.8S (x = 0, 0.05, 0.10, 0.15) thin films for deep and dilute blue LED applications