Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals

Auffray, E.; Augulis, Ramu̅nas; Borisevich, A.; Gulbinas, Vidmantas; Fedorov, A.; Korjik, M.; Lucchini, M. T.; Mechinsky, V.; Наргелас, С.; Songaila, Egidijus; Тамулайтис, Г.; Vaitkevičius, A.; Zazubovich, S.

doi:10.1016/j.jlumin.2016.05.015

Cited by 41 publications

(20 citation statements)

References 26 publications

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“…The samples without codoping exhibit room temperature phosphorescence at photoexcitation in the absorption bands of both Ce 3+ and Gd 3+ . Worth to note, the spectra of the TSL glow creation, absorption spectra of Ce 3+ ions and spectra of phosphorescence creation coincide …”

Section: Resultssupporting

confidence: 84%

Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions

Auffray

Augulis

Fedorov

et al. 2018

Physica Status Solidi (a)

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Time‐resolved spectroscopic study of the photoluminescence response to femtosecond pulse excitation and free carrier absorption at different wavelengths, thermally stimulated luminescence measurements and investigation of differential absorption are applied to amend the available data on excitation transfer in GAGG:Ce scintillators, and an electronic energy‐level diagram in this single crystal is suggested to explain the influence of codoping with divalent Mg on luminescence kinetics and light yield. The conclusions are generalized by comparison of the influence of aliovalent doping in garnets (GAGG:Ce) and oxyorthosilicates (LSO:Ce and YSO:Ce). In both cases, the codoping facilitates the energy transfer to radiative Ce3+ centers, while the light yield is increased in the LYSO:Ce system but reduced in GAGG:Ce.

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Section: Resultssupporting

confidence: 84%

Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions

Auffray

Augulis

Fedorov

et al. 2018

Physica Status Solidi (a)

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“…This interpretation is consistent with the published observation that the luminescence rise time in GAGG:Ce equals several nanoseconds [6].…”

Section: Free Carrier Absorption In Yagg:cesupporting

confidence: 93%

“…provide conditions for formation of self-localized excitons. Furthermore, the FCA exhibits a respond kinetics, which correlates with the photoluminescence kinetics observed by us before [6].…”

Section: Free Carrier Absorption In Pbwo4supporting

confidence: 87%

“…The rise time of the luminescence response to short pulse excitation in GAGG:Ce was found to be in the range of several nanoseconds even at the direct resonant excitation of Ce 3+ ions [6]. This feature was explained by taking into account possible carrier trapping at the sublattice of the host-building Gd 3+ ions, which is in line with the excitation transfer from Gd 3+ to Ce 3+ studied in Gd2SiO5:Ce crystal [12].…”

Section: Introductionsupporting

confidence: 59%

“…Recently, we investigated the carrier dynamics in PbWO4 (PWO) and Gd3Al2Ga3O12:Ce (GAGG:Ce) using time-resolved photoluminescence technique [6].…”

Section: Introductionmentioning

confidence: 99%

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Free carrier absorption in self-activated PbWO4 and Ce-doped Y3(Al0.25Ga0.75)3O12 and Gd3Al2Ga3O12 garnet scintillators

et al. 2016

Self Cite

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Highlights: Free electrons are generated by short pulse in subpicoseconds in PWO and YAGG:Ce  The relaxation of holes from Gd to valence band in GAGG:Ce takes 5-10 ps  Hole trapping at Gd deteriorates response speed in mixed garnet scintillators Keywords: Scintillators, free carrier absorption, lead tungstate, cerium-doped garnets. AbstractNonequilibrium carrier dynamics in the scintillators prospective for fast timing in high energy physics and medical imaging applications was studied. The time-resolved free carrier absorption investigation was carried out to study the dynamics of nonequilibrium carriers in wide-band-gap scintillation materials: self-activated led tungstate (PbWO4, PWO) ant two garnet crystals, GAGG:Ce and YAGG:Ce. It was shown that free electrons appear in the conduction band of PWO and YAGG:Ce crystals within a sub-picosecond time scale, while the free holes in GAGG:Ce appear due to delocalization from Gd 3+ ground states to the valence band within a few picoseconds after short-pulse excitation. The influence of Gd ions on the nonequilibrium carrier dynamics is discussed on the base of comparison the results of the free carrier absorption in GAGG:Ce containing gadolinium and in YAGG without Gd in the host lattice.

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Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

Průša

Kučera

Babin

et al. 2017

Advanced Optical Materials

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Using liquid phase epitaxy, the Mg co-doped multicomponent garnet film scintillators of composition (Ce 0.01 Lu 0.27 Gd 0.74 ) 3-x Mg x (Ga 2.48 Al 2.46 )O 12 , x = 0-0.002 (0-700 at. ppm) are prepared. Following luminescence and scintillation characteristics and their dependence on Mg concentration are studied: photoluminescence emission and excitation spectra, radioluminescence spectra, photoluminescence and scintillation decay curves, light yield, energy resolution, and afterglow. At lower Mg concentration, the timing characteristics are slightly improved, while light yield and energy resolution are not negatively influenced. At higher Mg concentration, scintillation decay is significantly accelerated, although light yield is somewhat reduced. Afterglow values become extraordinarily low for a garnet scintillator, at least two times better than the best values published so far, which paves the way for their application in fast frame imaging applications. A mechanism of the improvement is shortly discussed.

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Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals

Cited by 41 publications

References 26 publications

Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions

Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions

Free carrier absorption in self-activated PbWO4 and Ce-doped Y3(Al0.25Ga0.75)3O12 and Gd3Al2Ga3O12 garnet scintillators

Garnet Scintillators of Superior Timing Characteristics: Material, Engineering by Liquid Phase Epitaxy

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