MRS Proc. 2001 DOI: 10.1557/proc-692-h9.14.1 View full text
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E. Nogales, B. Méndez, J. Piqueras, R. Plugaru, J. A. García, T. J. Tate

Abstract: ABSTRACTThe luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo-and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two types of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen coimplanted crystalline and amorphous sili…

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