Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Chaudhry, Mujeeb Ullah; Tetzner, Kornelius; Lin, Yen‐Hung; Nam, Sungho; Pearson, Christopher; Groves, Chris; Petty, Michael C.; Anthopoulos, Thomas D.; Bradley, Donal D. C.

doi:10.1021/acsami.8b06031

Cited by 22 publications

(35 citation statements)

References 33 publications

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“…Furthermore, it shows a maximum brightness of 14 500 cd m −2 with a driving voltage of −24 V (Figure b). To our knowledge, this is the highest brightness for OLET among all the published results with the driving voltage of below 25 V . A photo image of a light emission OLET device can be seen in Figure S2b (Supporting Information).…”

Section: Resultsmentioning

confidence: 83%

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Chen

Xing

Miao

et al. 2020

Advanced Optical Materials

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In this work, the multilayer organic light emitting transistors (OLETs) based on high‐k polymer crosslinked poly(vinyl alcohol) (C‐PVA) as the dielectric layer are studied. The devices show an excellent brightness of 14 500 cd m−2 and a record breaking external quantum efficiency (EQE) of about 9.0% in inert atmosphere. The use of perfluoro(1‐butenyl vinyl ether) polymer (CYTOP) modified C‐PVA as a hydrophobic dielectric affords OLETs with good stability, displaying a maximum brightness of 13 400 cd m−2 and EQE of 7.31% in ambient conditions with high humidity (relative humidity RH = 70%). Furthermore, the flexible OLETs based on CYTOP/C‐PVA dielectric layer show a brightness of 8300 cd m−2 and a peak EQE at 9.01%, which is the first reported flexible OLET with >500 cd m−2 brightness. The excellent OLET device performance is ascribed to the excellent hole transport structure, high efficiency of guest–host system, and the better carrier balance in the emitting layer, which could be a practical strategy to develop high‐performance flexible OLETs. It is proven for the first time that OLETs could achieve such high EQE and brightness, even for flexible OLETs, paving the way for their future application in industry.

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Section: Resultsmentioning

confidence: 83%

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Chen

Xing

Miao

et al. 2020

Advanced Optical Materials

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“…Alternative approaches to n ‐type charge transport have been the use of inorganic semiconductors such as CdS, metal oxides ( e.g ., ZnO, ZTO, and AZO) and metal oxynitride (e.g., ZnON) (Table , hybrid LETs). A much higher charge mobility of up to 19 cm 2 V −1 s −1 and a high channel current ON/OFF ratio (>10 6 ) have been achieved.…”

Section: Let Materialsmentioning

confidence: 99%

“…However, most of highly luminescent organic light‐emitting materials suffer from poor charge mobility. Therefore, to overcome the intrinsic lower mobility, heterostructure LETs have been reported utilizing an organic emissive material in combination of a wide range of high mobility materials including polymers, small molecules, metal oxides, and carbon nanotubes (CNTs) …”

Section: Low Operating Voltage Letsmentioning

confidence: 99%

“…A combination of high dielectric materials and lower dielectric film thickness can be most effective. Recently, Chaudhry et al have shown that a combination of high‐ k and low‐ k dielectrics based two‐layer dielectric strategy was effective to lower the operating voltage below 10 V by reducing the charge trap states at dielectric/charge transport layer ( Figure ) . McCarthy et al employed a thin layer of ALD grown Al 2 O 3 capped with a benzocyclobutene (BCB) dielectric layer in combination with high mobility CNT charge transporting layer to significantly lower the operating voltage of LET .…”

Section: Low Operating Voltage Letsmentioning

confidence: 99%

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Organic Light‐Emitting Transistors: Advances and Perspectives

Chaudhry

Muhieddine

Wawrzinek

et al. 2019

Adv Funct Materials

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The rapid development of charge transporting and light-emitting organic materials in the last decades has advanced device performance, highlighting the high potential of light-emitting transistors (LETs). Demonstrated for the first time over 15 years ago, LETs have transformed from an optoelectronic curiosity to a serious competitor in the race for cheaper and more efficient displays, also showing promise for injection lasers. Thus, what is an LET, how does it work, and what are the current challenges for its integration into mainstream technologies? Herein, some light is shed on these questions. This work also provides the fundamental working principle of LETs, materials that have been used, and device physics and architectures involved in the progression of LET technology. The state-of-the-art development of LETs is also explored as prospect avenues for the future of research and applications in this area.

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“…They must be reduced to less than 10 V, which should be fairly straightforward by employing thin and high‐k dielectrics as demonstrated for other types of transistors . This was indeed accomplished recently for a multilayer LEFETs with an inorganic transport layer . Optimizing the gate dielectric and reducing the channel length (<20 μm) would also increase the switching speed of these LEFETs for possible display and signaling applications …”

Section: Lateral Multilayer and Unipolar Lefetsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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Light-emitting field-effect transistors (LEFETs) combine switching and amplification with light emission and thus represent an interesting optoelectronic device. They are not limited anymore to a few examples and specific materials but are nearly universal for a wide range of semiconductors, from organic to inorganic and nanoscale. This review introduces the basic working principles of lateral unipolar and ambipolar LEFETs and discusses recent examples based on various solution-processed semiconducting materials. Applications beyond simple light emission are presented and possible future directions for lightemitting transistors with added functionalities are outlined. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201905269.thus excluding vertical LEFETs, which have been demonstrated for some organic emitter systems. [5][6][7] We will start with LEFETs that do not rely on the injection of both holes and electrons in a single semiconducting layer but show unipolar charge transport and may include multiple semiconducting layers. This short section will be followed by an overview of truly ambipolar single-layer LEFETs, the different possible working principles and various emissive semiconductors with their advantages and drawbacks. The review will conclude with recent examples of LEFET applications that go beyond simple light-emission and take advantage of specific device properties to add functionalities that are difficult to achieve with other optoelectronic devices.

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Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Cited by 22 publications

References 33 publications

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Organic Light‐Emitting Transistors: Advances and Perspectives

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

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