Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes

Auer, U.; Prost, W.; Agethen, M.; Tegude, F.-J.; Duschl, R.; Eberl, K.

doi:10.1109/55.919233

Cited by 31 publications

(17 citation statements)

References 9 publications

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“…Biases of 273, 285 and 309 mV were in the NDR region, whereas 233 mV was below the NDR. The gain rolloff was 6 dB per frequency octave, with a cutoff frequency of 1.6 GHz, similar to the SiGe interband tunnel diodes with kA/cm presented in reference [6]. Fig.…”

Section: Introductionsupporting

confidence: 78%

“…Low-temperature molecular beam epitaxy (LTMBE) has produced highly doped silicon and silicon-germanium tunnel diodes of the p-n junction Esaki-type, and interband tunneling diodes with delta-doped layers [3]- [6]. Epitaxial diodes are anticipated to be compatible with integrated circuits, unlike the discrete metal-alloyed tunnel diodes that have been commercially available for decades [7].…”

Section: Introductionmentioning

confidence: 99%

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Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

Dashiell

Kolodzey

Crozat

et al. 2002

IEEE Electron Device Lett.

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The bias dependence of the single-port microwave reflection gain of 15 m-diameter Si Esaki tunnel diodes, grown by molecular beam epitaxy, was studied as a function of frequency. A simple equivalent circuit accurately modeled the data and yielded the forward-bias junction capacitance, which cannot be obtained by conventional low frequency capacitance-voltage techniques. The diodes were highly-doped step p-i-n junctions and exhibited a peak current density of 16 kA/cm 2 . The microwave reflection gain and cutoff frequency were 12 dB and 1.6 GHz, respectively, with a speed index (slew rate) of 7.1 V/ns.

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Section: Introductionsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

Dashiell

Kolodzey

Crozat

et al. 2002

IEEE Electron Device Lett.

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“…The intrinsic Esaki tunnel diode model consists of an ideal tunnel diode a nonlinear capacitor and a nonlinear resistor, see Figure 4. An analytic expression for tunneling current density in a p+n+ junction is given by Sze [13] for the indirect tunneling case,…”

Section: Model Spice Of Tunnel Diodementioning

confidence: 99%

“…This formulation appears in Sze [13], although here the physics is limited only to the forward-bias direction. Referring to Figure 1, this is expressed as Where …”

Section: Model Spice Of Tunnel Diodementioning

confidence: 99%

PSpice Implementation of a New Esaki Tunnel Diode Macro-Model

Lotfi¹,

Dibi²

2016

IJSH

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“…In this regard, new materials may cover the followings: carbon nano-tube (CNT) (Iijima, 1991), nano-wire (NW) (Yanson et al, 1998), conducting polymer (Sirringhaus et al 1998), and molecules (Collier et al, 1999). New devices could also be comprised of many active elements, such as tunneling transistors (Auer et al, 2001), spin transistors (Supriyo Datta & Biswajit Das, 1990), molecular transistors (Collier et al, 1999), single electron transistors (SETs) (Fulton & Dolan, 1987) and others. We may be able to extend this to new concepts, varying from nano-scale computing (DeHon, 2003) and FET decoding (Zhong et al, 2003) to lithography-free addressing .…”

Section: Chip Level Of 3-d Integrationmentioning

confidence: 99%