Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

Abstract

The high performance Hf doped ZnO (Hf-ZnO) flexible thin film transistors (TFTs) were fabricated using Ag NWs as gate electrode and high-k HfO 2 as dielectric. The field effect mobility of Hf-ZnO is 14.7 cm 2 /Vs, I on /I off ratio is more than 10 6 , and the subthreshold swing is about 0.26 V/dec. Furthermore, after 5000 bending cycles test, the TFTs with Ag NWs still maintain a superior performance, such as the high mobility of 12.6 cm 2 /Vs and the small subthreshold swing of 0.33 V/dec. The operating voltage of Hf-ZnO is only 5 V, showing the great potential of application in low-powered devices. We also fabricated the resistor-loaded inverter based on the flexible TFTs. The shift of input voltage is negligible with different supplied voltages, indicating the highly-stable property of the inverter. As a result, the low consumption optoelectronics provide great inspiration for researchers to construct the next generation high performance wearable and flexible devices. INDEX TERMS Low-voltage, Ag nanowire, transistors, logic circuit.

Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources

“…At a deposition temperature of 100 °C, the TFT devices show a low I on / I off ratio of 3 × 10 4 for the H 2 O‐ZnO TFT and 7 × 10 3 for the H 2 O 2 ‐ZnO TFT, indicating that a low deposition temperature cannot provide enough energy to activate the channel layer in TFTs. [ 38 ] However, at a deposition temperature of 150 °C, the TFT devices show promising performance, as indicated in Table 1 . In addition, the trapping state, N trap , was calculated by the following equation where k B is Boltzmann's constant, T is the temperature in Kelvin, and q is the electron charge.…”

Syntheses of Silver Nanowires Ink and Printable Flexible Transparent Conductive Film: A Review

“…Therefore, researchers now dedicate themselves to seeking candidates for FTCF, including silver nanowires (AgNWs), mental meshes, carbon nanotubes, and reduced oxide graphene (rGO). AgNWs as an emerging alternative to ITO, on account of good electrical conductivity, remarkable optical transparency, excellent mechanical flexibility, and compatibility, are the functional materials of many flexible devices, as shown in Figure 1a, such as solar cells [1,2], touch panels [3], organic light-emitting diodes (OLEDs) [4], polymer light-emitting diodes (PLED) [5], sensors [6,7], photodetectors [8,9], electrochromic devices [10], flexible thin film transistors (TFTs) [11], electromagnetic interference (EMI) shielding materials [12], and supercapacitors [13]. AgNWs is a one-dimensional linear material with a high aspect ratio (ratio of length to diameter, AR) which is closely in connection with its synthesis method.…”

“…How to lessen Rs without losing transmissivity is therefore a tough prospect because they are contradictory. With the development of flexible electronic devices, printed electronics technology has gradually been investigated [8][9][10][11][12][13][14][15]. However, there are few reviews related to the printing of AgNWs inks.…”