Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy

Cai, Wensi; Wilson, Joshua; Zhang, Jiaye; Park, Seonghyun; Majewski, Leszek A.; Song, Aimin

doi:10.1109/led.2018.2882464

Cited by 24 publications

(16 citation statements)

References 21 publications

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“…The MOS-TFT device prepared by Magnetron sputtering presents excellent electrical characteristics, but it has shortcomings such as relatively complex fabrication process, high cost and RF radiation damage. Solution-processed MOS films exhibit many advantages such as low cost, and the prepared films have excellent uniformity and high component purity [1,[10][11][12][13][14]. The solution-processing method 2 of 11 mainly includes dip coating, spraying, spin coating, printing, and so on.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Zhang

Zhou

et al. 2019

Coatings

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Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indium oxide (InxZryO) thin films were prepared by the solution method, with indium oxide being doped with zirconium in order to tune the relative number of oxygen vacancies. The influence of the Zr doping concentration and the post-annealed temperature on the properties of the InxZryO thin films was investigated. The results show that the doping process improves the crystallinity and relative density of the obtained films. A novel nondestructive method named microwave photoconductivity decay (μ-PCD) was used to evaluate the quality of InxZryO thin films by simply measuring their response under laser irradiation. The relative number of oxygen vacancies and the minority carrier concentration achieved minimum values at 10 at.% Zr doping concentration. Furthermore, InxZryO thin films with optimal properties from an electrical point of view were obtained at 10 at.% Zr doping concentration, annealed at 400 °C. Characterized by an average transmittance above 90% in the visible range, the obtained InxZryO thin films can be used as active layer materials in the fabrication of high-performance thin film transistor (TFT) devices.

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Section: Introductionmentioning

confidence: 99%

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Zhang

Zhou

et al. 2019

Coatings

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“…We found that the transfer curve negatively shifts, and electrical properties are as follows: a field-effect mobility of 16.37 cm 2 V -1 s -1 , a sub-threshold swing of 0.22 V/decade, and an ION/IOFF of 2.59 × 10 7 . The reason for parameter variations is that atom distance of the ZnO active layer increases during bending [23], [24]. More electrons move to the antibonding state, therefore the channel conductivity increases.…”

Section: Resultsmentioning

confidence: 99%

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C

Dong

et al. 2021

IEEE J. Electron Devices Soc.

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In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 ℃. Interestingly, the ZnO TFTs exhibit superior electrical properties, including a field-effect mobility of 14.32 cm 2 V -1 s -1 , a sub-threshold swing of 0.21 V/decade, and an on-to-off current ratio of 3.03 × 10 7 . Also, ideal uniformity, hysteresis property, contact resistance, and stability are achieved. Threshold voltage shift (VTH) under positive and negative bias stress are 0.17 and -0.18 V, respectively. Moreover, the ZnO TFTs manifest good mechanical performance at a bending radius of 10 mm. We expect that our findings propel practical application of the oxide TFTs in flexible electronics.

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“…At present, metal oxide semiconductors are mainly fabricated by vacuum deposition methods, which have strict environmental requirements and relatively high manufacturing cost [ 10 , 11 ]. In contrast, solution-processed deposition offers the advantages of a simple process, high-throughput, high material utilization rate, and easy control of chemical components, which provides the possibility for large-area preparation of metal oxide semiconductor [ 12 , 13 , 14 , 15 , 16 , 17 ]. The preparation of metal oxides by the solution method usually requires annealing, which promotes the formation of (M–O–M) structure and the densification of film [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Yao

et al. 2021

Micromachines

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In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

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Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy

Cited by 24 publications

References 21 publications

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

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