Low voltage bipolar resistive switching in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode

Pramod, K.; Gangineni, R. B.

doi:10.1016/j.orgel.2016.12.014

Cited by 19 publications

(6 citation statements)

References 29 publications

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“…Using a MEW printer with an adjustable Z-height and adjustable high voltage while printing would potentially help to overcome the before mentioned boundary in the layer stacking height, as previously shown. 7 Furthermore, the thermal gradient of the jet 24 would be better defined within a controlled temperature/ humidity environment to tailor fiber fusion.…”

Section: Resultsmentioning

confidence: 99%

“…Another polymer that has been demonstrated compatible with MEW is poly(vinylidene difluoride)(PVDF), 5 an electroactive polymer with a range of applications involving electronic, [6][7][8][9] actuating, 10 biomedical materials 11 and membranes. [12][13][14] One noticeable distinction between MEW processing of PVDF in this study and PCL, is that the printing process becomes unstable above five layers, with warping of the scaffold from the collector back towards the printer head.…”

Section: Introductionmentioning

confidence: 99%

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Melt electrowriting of poly(vinylidene difluoride) using a heated collector

Kade

Otto

Luxenhofer

et al. 2021

Polymers for Advanced Techs

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Previous research on the melt electrowriting (MEW) of poly(vinylidene difluoride) (PVDF) resulted in electroactive fibers, however, printing more than five layers is challenging. Here, we investigate the influence of a heated collector to adjust the solidification rate of the PVDF jet so that it adheres sufficiently to each layer. A collector temperature of 110 C is required to improve fiber processing, resulting in a total of 20 fiber layers. For higher temperatures and higher layers, an interesting phenomenon occurred, where the intersection points of the fibers coalesced into periodic spheres of diameter 206 ± 52 μm (26G, 150 C collector temperature, 2000 mm/min, 10 layers in x-and y-direction).The heated collector is an important component of a MEW printer that allows polymers with a high melting point to be processable with increased layers.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Melt electrowriting of poly(vinylidene difluoride) using a heated collector

Kade

Otto

Luxenhofer

et al. 2021

Polymers for Advanced Techs

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“…In the case of copolymers including poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), the addition of one more fluorine atom provides the delicate configuration balance and always results in the polar ferroelectric β structure [32]. However, PVDF possesses higher ferroelectric transition temperature and thermal stability of remnant polarization in comparison with its copolymers [33,34]. PVDF has a high Curie temperature of 167°C compared to the P(VDF-TrFE) copolymers with Curie temperatures from 60 to 100°C related with the TrFE content [10].…”

Section: Application In Organic Memory Devicesmentioning

confidence: 99%

“…The resistance versus voltage (R-V) curves are shown in Figure 12b. A maximum resistance ratio of 25 may be practical for application in nonvolatile memory devices [34]. Several phenomena in capacitor structures exist in the literature used to explain the bistability using the filamentary conduction along with Schottky emission, trap charging and discharging, space charge limited current and Poole-Frenkel emission [78].…”

Section: Organic Capacitorsmentioning

confidence: 99%

Preparation and Device Applications of Ferroelectric β-PVDF Films

Ruan¹,

Zhang²,

Tong³

et al. 2018

Ferroelectrics and Their Applications

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Organic ferroelectric materials have unique characters comparing to their inorganic counterparts in electronics because they show the advantages such as low cost, lightweight, small thermal budget, flexible and nontoxic characteristics. The ferroelectric poly(vinylidene fluoride) (PVDF) is mostly desired for memory devices due to its polar phase. To obtain the ferroelectric memory devices for data storage, ultrathin PVDF films are required to allow for low operation voltages with both small roughness and free of pin-holes. Micronmeter thick films of ferroelectric phase PVDF can be easily achieved by many preparation methods. But the nanofilms could be mainly fabricated by coating method and Langmuir-Blodgett deposition technique. Meanwhile, according to the structure of devices, four types of organic memory cells using ferroelectric phase PVDF films were introduced, such as memory based on metal/organic semiconductor/metal ferroelectric tunnel junctions, organic capacitors, field effect transistor and organic diodes. The research has been mainly done in Zhang's laboratory from September 2016 to explore the preparation and potential applications of ferroelectric PVDF films. In this chapter, we summarize several device investigations and show the PVDF films have the promising memory applications.

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“…Domain dynamics in organic ferroelectric thin films attracted a lot of attention due to their applicability in nonvolatile ferroelectric and resistive random access memory devices. [1][2][3][4][5][6][7][8][9][10][11][12] Organic ferroelectric memory devices signify their compatibleness with flexible substrates and also for their suitability in low operation performance devices. 8 The remnant polarization and its response to the applied signal amplitude and frequency are crucial to assess the writing speed and reading time of these memory devices.…”

Section: Introductionmentioning

confidence: 99%

Low‐frequency ferroelectric switching studies in PVDF thin films across Cu or (Ag/Cu)/PVDF/Cu capacitor structures

Chikkonda

Ravindran

Saikia

et al. 2020

J of Applied Polymer Sci

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Ferroelectric switching dynamics of polyvinylidene fluoride (PVDF) thin films in Cu or (Ag/Cu)/PVDF/Cu capacitors are explored by varying PVDF film thickness, applied electric field amplitude (4.35-87.5 MV/m) and frequency (100 mHz-200 Hz). Comprehending spontaneous polarization and its dependence upon interfaces, an electric field is critical for organic ferroelectric memory devices. In this article, quasi-static current-voltage, and polarization-electric field measurements are used to explain the relationship between the coercive field, signal amplitude, and frequency. The observed coercivity enhancement at lower PVDF film thicknesses and with rising frequencies of the applied signal is discussed with Kolmogorov-Avrami-Ishibashi domain nucleation and growth model. The relation between domain growth and the top electrode layer is further discussed from the exponent parameters.

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Low voltage bipolar resistive switching in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode

Cited by 19 publications

References 29 publications

Melt electrowriting of poly(vinylidene difluoride) using a heated collector

Melt electrowriting of poly(vinylidene difluoride) using a heated collector

Preparation and Device Applications of Ferroelectric β-PVDF Films

Low‐frequency ferroelectric switching studies in PVDF thin films across Cu or (Ag/Cu)/PVDF/Cu capacitor structures

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