Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode

Albano, Luiz G. S.; Boratto, Miguel H.; Nunes-Neto, Oswaldo; Graeff, Carlos Frederico de Oliveira

doi:10.1016/j.orgel.2017.08.011

Cited by 24 publications

(15 citation statements)

References 33 publications

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“…[ 102 ] In the literature, the perforated source layer has been prepared mainly through the formation of self‐assembled electrodes, for example, based on metallic nanowires (NWs) and graphene (Figure 3c–e). [ 88,102–109 ] The use of self‐assembled nanopatterned electrodes in VOFETs was first implemented by Ben‐Sasson et al. by preparing a polystyrene (PS) block poly(methyl methacrylate) (PMMA) copolymer film via spin‐coating and then removing the PMMA matrix to obtain PS nanoparticles.…”

Section: Organic Field‐effect Transistorsmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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According to the forecast of Allied Market Research, the flexible electronics market is projected to reach $42.48 billion by 2027. It is estimated to revolutionize the lighting technology, power integration displays, and health monitoring systems. The popularity of flexible electronics is mainly due to the unique benefits of organic materials and devices that offer cost-effectiveness, low-temperature processability, mechanical softness, and shape adaptability, [5][6][7] which are difficult to obtain with traditional, complementary-metal-oxide-semiconductor (CMOS)-based rigid systems. [8] Over the past two decades, research interest in flexible electronic systems has grown exponentially, driven by the requirements of interface softness and shape adaptability for electronics used in Internet-of-Things (IoT), [9] human-machine interfaces, [10] and advanced healthcare. [11] Although significant progress has been made in academia, the practical application of flexible electronics in the industry is limited. Presently, thin-film photovoltaics and flexible displays mainly contribute to the flexible electronics market, with a noticeable presence held by radio frequency identification (RFID) tags and medical X-ray imagers. [12] Indeed, much of the success of present flexible electronic systems rely on the performance and reliability of thin-film The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET-and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

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Section: Organic Field‐effect Transistorsmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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“…Metal nanowires, such as Ag nanowire (AgNW), are typical conductive nanowires used in flexible electronics, due to their excellent mechanical deformability, high conductivity with less than 20 Ω/sq, and high transparency with a transmittance of 85% [ 60 ]. In addition to their employment in drain/source/gate electrodes of transistors, AgNW is also widely employed in flexible and wearable sensors [ 66 ].…”

Section: Low-dimensional Materialsmentioning

confidence: 99%

“… Representative 1D conductor, semiconductor, and insulator materials used in the fabrication of neuromorphic devices. The 1D materials can be used as a resistive layer of memristor, channeling materials of the transistor and electrodes of both types of devices [ 60 , 61 , 62 , 63 , 64 , 65 ]. Reprinted/adapted with permission from Ref.…”

Section: Figurementioning

confidence: 99%

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Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

Zhao

Huang

et al. 2023

Nanomaterials

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With the rapid development of artificial intelligence and the Internet of Things, there is an explosion of available data for processing and analysis in any domain. However, signal processing efficiency is limited by the Von Neumann structure for the conventional computing system. Therefore, the design and construction of artificial synapse, which is the basic unit for the hardware-based neural network, by mimicking the structure and working mechanisms of biological synapses, have attracted a great amount of attention to overcome this limitation. In addition, a revolution in healthcare monitoring, neuro-prosthetics, and human–machine interfaces can be further realized with a flexible device integrating sensing, memory, and processing functions by emulating the bionic sensory and perceptual functions of neural systems. Until now, flexible artificial synapses and related neuromorphic systems, which are capable of responding to external environmental stimuli and processing signals efficiently, have been extensively studied from material-selection, structure-design, and system-integration perspectives. Moreover, low-dimensional materials, which show distinct electrical properties and excellent mechanical properties, have been extensively employed in the fabrication of flexible electronics. In this review, recent progress in flexible artificial synapses and neuromorphic systems based on low-dimensional materials is discussed. The potential and the challenges of the devices and systems in the application of neuromorphic computing and sensory systems are also explored.

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“…Many VFETs use a source electrode that is embedded in the semiconductor layer and sandwiched between the drain and dielectric/gate electrode . In this geometry, the source electrode has to be very thin or structured or consist of nanowires, to allow the electric field of the gate electrode to penetrate and thereby control charge accumulation and conductivity. − Others have used a triode-like structure, i.e., a gate electrode placed within the semiconductor and between source and drain, which unfortunately results in rather high leakage currents. , …”

Section: Introductionmentioning

confidence: 99%

Vertical Electrolyte-Gated Transistors Based on Printed Single-Walled Carbon Nanotubes

Rother

Kruse

Brohmann

et al. 2018

ACS Appl. Nano Mater.

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For all-printed circuits, the critical device dimensions, in particular, the channel length in lateral field-effect transistors (FETs), are limited by the printing resolution and alignment accuracy. In contrast, the channel length in vertical electrolyte-gated transistors (VEGTs) is mainly defined by the film thickness and can be easily scaled down to less than 100 nm to achieve high current densities. For practical VEGTs, the printed semiconductor must be highly porous to enable efficient electrolytegating by ion penetration. Here, we use aerosol-jet (AJ)-printed layers of polymer-sorted (6,5) single-walled carbon nanotubes with film thicknesses from less than 50 nm to several hundred nanometers as the semiconducting layer sandwiched between evaporated (gold) or printed (silver nanoparticle) metal electrodes and gated by an ionic-liquid-based ion gel. Vertical charge transport in the obtained three-dimensional nanotube networks is confirmed via conductive AFM measurements. The nanotube network VEGTs exhibit transfer characteristics with good on/off ratios and high on-conductances. The effective gating of the semiconducting nanotubes throughout the entire active area of several hundred μm 2 is corroborated by in situ Raman spectroscopy. The overall transistor performance scales with film thickness and electrode overlap and is comparable to photolithographically structured lateral electrolyte-gated transistors with 2 μm short channels. VEGTs could thus be a viable replacement of printed lateral FETs that require too much space for the desired drive currents.

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Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode

Cited by 24 publications

References 33 publications

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

Vertical Electrolyte-Gated Transistors Based on Printed Single-Walled Carbon Nanotubes

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