2004
DOI: 10.1063/1.1759077
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Low-temperature growth of ZnO nanostructure networks

Abstract: Networks consisting of one-dimensional ZnO nanowires and two-dimensional ZnO nanowalls were synthesized using a catalyst-free low-temperature approach. The size of the nanostructure was much smaller than that obtained by the previous catalyst-assisted method. The nanostructures exhibited stable excitonic states at room temperature, and emission due to exciton-exciton scattering was observed.

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Cited by 48 publications
(49 citation statements)
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“…Much effort has been devoted to the development of ZnO nanostructures by different methods. 1-D ZnO nanostructures have been synthesized by chemical vapor deposition (CVD) [10], thermal evaporation [11], pulsed laser deposition (PLD) [12]. All these methods need either complex procedures, sophisticated equipments or rigid experimental conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Much effort has been devoted to the development of ZnO nanostructures by different methods. 1-D ZnO nanostructures have been synthesized by chemical vapor deposition (CVD) [10], thermal evaporation [11], pulsed laser deposition (PLD) [12]. All these methods need either complex procedures, sophisticated equipments or rigid experimental conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Carbothermal reduction [10][11][12] and MOCVD technique [13,14] are widely used to synthesize this nanostructure. The former involves the reaction of ZnO powder with carbon, in which precise control of the Au catalyst thickness and a rather high growth temperature (875-1125 1C) are needed.…”
mentioning
confidence: 99%
“…The thickness of the ZnO nanotube array film was about 300 nm. The key step in this process is the formation of oriented nanowires and their self-assembly to hexagonal circle shapes, as reported by Zhang and colleagues [367]. The nanowires grew subsequently in nanotubular structure, although not all of the nanowire circle planes were parallel to the horizontal plane, due to the roughness of F-SnO 2 surface.…”
Section: Semiconductorsmentioning
confidence: 76%