Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Horíkoshi, Yoshiji; Kawashima, Minoru; Yamaguchi, Hiroshi

doi:10.1143/jjap.25.l868

Cited by 387 publications

(60 citation statements)

References 8 publications

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“…Recently CA-ordering has been demonstrated in CuInSe2 in both copper and indium-rich materials grown by Migration-Enhanced Epitaxy (MEE) [60] using XRD, TEM, and Raman scattering detection techniques [61]. Further studies of the electronic and optical properties of CA-CIS are needed to assess their impact on PV device absorber materials, which very likely contain nanoscale domains of this crystallographic polytype.…”

Section: Metastable Crystallographic Structures -Cuau-orderingmentioning

confidence: 99%

See 1 more Smart Citation

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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Section: Metastable Crystallographic Structures -Cuau-orderingmentioning

confidence: 99%

“…The Migration Enhanced Epitaxy (MEE) process variant [60] of molecular beam epitaxy was utilized to grow CIS epilayers on single-crystal substrates.…”

Section: Epitaxial Growthmentioning

confidence: 99%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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“…Several years ago, one of our researchers invented an improved method of molecular beam epitaxy called migration-enhanced epitaxy, or MEE (Horikoshi et al 1986). MEE features monoatomic control of growing layers, growth at low temperatures, growth of new and exotic materials, and growth of low-dislocationdensity GaAs on a Si substrate, as shown in Fig.…”

Section: Surface Structure Transitions Of Gaas Inas and Simentioning

confidence: 99%

Basic and Applied Research at NTT and Postgraduate Education

Kimura¹

1995

Aust. J. Phys.

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Several current research topics, which are studied at NTT Basic Research Laboratories, are reviewed in the fields of semiconductor physics, quantum optics and biophysics. These topics include the surface structure transition of GaAs, InAs and Si, electron transport in lowdimensional structure, microcavity quantum-wire semiconductor lasers, quantum nondemolition measurement of fibre solitons, and artificial network development of cultivated neural cells.

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“…Provided stoichiometry conditions remain fulfilled, the minimization of this flux improves the quality of stuctures in most cases, and, in the case of AlAs, smooths down surfaces and interfaces. A limiting case of optimization is provided by "Migration Enhanced Epitaxy" (MEE) [11], where the arsenic flux is interupted during the deposition of, approximately, one monolayer of group III atom. The MEE technique is not well suited for the growth of thick structures, since it requires several shutter motions per monolayer, but it may help to improve the quality of critical interfaces.…”

Section: Mbe Growth Of Gaas/alas Heterostructuresmentioning

confidence: 99%