Low temperature growth of epitaxial CdSe thin films by an isothermal closed space sublimation technique using two elemental sources

Melo, O. de; Sanchez, Edward; Rodríguez, Hortensia; Roux, S. De; Rabago-Bernal, F.; Ruíz-García, Jaime

doi:10.1016/s0254-0584(98)00243-0

Cited by 17 publications

(11 citation statements)

References 7 publications

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“…[12][13][14][15][16] for growing II-VI semiconductor epitaxial layers. This is a simple and versatile growth technique suitable to grow semiconductor compounds based on elements of high vapor pressure such as II-VI materials.…”

Section: Introductionmentioning

confidence: 99%

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Larramendi¹,

Gutiérrez²,

Melo³

et al. 2010

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Larramendi¹,

Gutiérrez²,

Melo³

et al. 2010

Journal of Crystal Growth

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“…The crystalline texture may also change during heat treatments in such a way as to minimize surface and interface energies. Some of the commonly used low-cost growth techniques for CdSe thin-film formation include close-spaced sublimation [4], electrodeposition [5], vacuum evaporation [6] and chemical bath deposition [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature and post‐deposition annealing on the properties of evaporated CdSe thin films

Bacaksız¹,

Başol²,

Altunbaş

et al. 2007

Physica Status Solidi (b)

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The structural, morphological and optical properties of vacuum-evaporated CdSe thin films were investigated as a function of the substrate temperature and the post-deposition annealing conditions. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of 100 and 200 K. However, CdSe films produced at a substrate temperature of 300 K had substantially different surface morphology. Annealing at 473 -673 K in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 673 K initiated intergrain coalescence and altered surface morphology by reducing faceting. X-ray diffraction studies showed that the crystallinity of the CdSe films was improved upon annealing. The optical band gap energy values were obtained and two direct transitions were observed. This may be attributed to spin orbit splitting of the valence band. Resistivity measurements indicated that annealing at 673 K in air forms a highly resistive compensated CdSe film. The results showed that although the substrate temperature during growth plays the major role in determining the properties of deposited films, post-deposition annealing at temperatures of at least 673 K may lead to further changes in these properties.

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“…Now, the evaporated particles must diffuse though the inert gas; this transport mechanism is less efficient than the previous one. Under these conditions it is possible to calculate the diffusive flux for Zn in an Ar atmosphere using a simple model for the diffusion process in the close space system [10]. In this model the flux is calculated by using the Fick law:…”

Section: Inert Gas Environmentmentioning

confidence: 99%

Growth of ZnTe and CdTe films using the isothermal close space sublimation technique in vacuum environment

Larramendi

Zawislak

Behar

et al. 2010

Journal of Crystal Growth

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Low temperature growth of epitaxial CdSe thin films by an isothermal closed space sublimation technique using two elemental sources

Cited by 17 publications

References 7 publications

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

On the isothermal closed space sublimation growth of CdSe using a mixed source for selenium

Effect of substrate temperature and post‐deposition annealing on the properties of evaporated CdSe thin films

Growth of ZnTe and CdTe films using the isothermal close space sublimation technique in vacuum environment

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