Low temperature diamond growth by linear antenna plasma CVD over large area

Ižák, Tibor; Babchenko, Oleg; Varga, M.; Potocký, Štěpán; Kromka, Alexander

doi:10.1002/pssb.201200103

Cited by 52 publications

(26 citation statements)

References 20 publications

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“…These results show that the activation energy is not drastically influenced by the considered substrates. In addition, the values calculated here are sensibly above the values reported for low‐temperature NCD deposition for equivalent surface temperature range by Tsugawa et al using a surface‐wave plasma system ( E a = 1.6 kcal mol −1 ) and Izak et al using pulsed linear antenna microwave system ( E a = 1.6–2 kcal mol −1 ) , in H 2 /CH 4 and H 2 /CH 4 /CO 2 gas mixtures, respectively. However, it is worth noting that the activation energy estimated for the DAA reactor remains below those usually admitted between 5 and 9 kcal mol −1 for NCD or ultra‐NCD (UNCD) deposition processes when using conventional H 2 /CH 4 or Ar/H 2 /CH 4 gas mixtures at higher temperature (typically 500–900 °C) .…”

Section: Resultssupporting

confidence: 74%

Low‐temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

Baudrillart

Bénédic

Melouani

et al. 2016

Physica Status Solidi (a)

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The growth of nanocrystalline diamond (NCD) films on Si 3 N 4 ceramic substrates at low surface temperature using a distributed antenna array plasma-enhanced chemical vapor deposition (PECVD) process is investigated. The advantage of the considered deposition process for keeping a low growth temperature is demonstrated through microwave electric field simulation and comparisons with microwave cavity systems. The suitable design of the low-pressure distributed antenna array reactor thus prevents the ceramic substrate from overheating and consequently from film graphitization. Therefore, for the first time NCD/Si 3 N 4 tribosystems are achieved for deposition temperature in the range 250-400 8C. The nature of the ex situ pretreatment carried out on Si 3 N 4 ceramics in order to favor diamond nucleation, as well as temperature variation in the considered range, do not significantly influence the morphology, topography, composition, and microstructure of the NCD films, the characteristics of which remain very close to those of films deposited on Si substrates under the same conditions. Only the growth rate decreases by a factor of two, down to 15-17 nm h À1 , when the deposition temperature diminishes from 400 to 250 8C. This behavior is attributed to an activation energy almost substrate-independent estimated in the range 3.24-3.57 kcal mol À1 for the considered low-temperature and low-pressure NCD deposition process using a H 2 /CH 4 / CO 2 gas mixture.

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Section: Resultssupporting

confidence: 74%

Low‐temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

Baudrillart

Bénédic

Melouani

et al. 2016

Physica Status Solidi (a)

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“…The typical density of seeds after such a process is in a range up to 10 11 cm À 2 [26]. Diamond films were grown through the plasma CVD process with largely pulsed linear-antenna microwave (modified system AK 400, Roth and Rau, AG), which is derived from the CH 4 /CO 2 /H 2 gas mixture [27]. The conditions of diamond growth were 2.5% of CH 4 and 10% CO 2 compared with hydrogen, 2 Â pulsed microwave power of 2 kW and a substrate temperature of 650°C.…”

Section: Sample Preparation and Measurementsmentioning

confidence: 99%

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Remeš

Sun

Varga

et al. 2015

Journal of Magnetism and Magnetic Materials

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“…22,23 The parameters during the deposition process were as follows: 2.5% of CH 4 and 10% of CO 2 in a hydrogen atmosphere; total gas pressure of 10 Pa; pulsed microwave power of 1.7 kW on both sides of the antenna; and a substrate temperature of 650°C. It should be mentioned that the Si substrates were coated by a diamond film on both sides to minimize any unwanted effect of the Si substrate on the cell cultivation.…”

Section: -21mentioning

confidence: 99%

Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

Lišková¹,

Babchenko²,

Varga³

et al. 2015

IJN

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Nanocrystalline diamond (NCD) films are promising materials for bone implant coatings because of their biocompatibility, chemical resistance, and mechanical hardness. Moreover, NCD wettability can be tailored by grafting specific atoms. The NCD films used in this study were grown on silicon substrates by microwave plasma-enhanced chemical vapor deposition and grafted by hydrogen atoms (H-termination) or oxygen atoms (O-termination). Human osteoblast-like Saos-2 cells were used for biological studies on H-terminated and O-terminated NCD films. The adhesion, growth, and subsequent differentiation of the osteoblasts on NCD films were examined, and the extracellular matrix production and composition were quantified. The osteoblasts that had been cultivated on the O-terminated NCD films exhibited a higher growth rate than those grown on the H-terminated NCD films. The mature collagen fibers were detected in Saos-2 cells on both the H-terminated and O-terminated NCD films; however, the quantity of total collagen in the extracellular matrix was higher on the O-terminated NCD films, as were the amounts of calcium deposition and alkaline phosphatase activity. Nevertheless, the expression of genes for osteogenic markers – type I collagen, alkaline phosphatase, and osteocalcin – was either comparable on the H-terminated and O-terminated films or even lower on the O-terminated films. In conclusion, the higher wettability of the O-terminated NCD films is promising for adhesion and growth of osteoblasts. In addition, the O-terminated surface also seems to support the deposition of extracellular matrix proteins and extracellular matrix mineralization, and this is promising for better osteoconductivity of potential bone implant coatings.

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Low temperature diamond growth by linear antenna plasma CVD over large area

Cited by 52 publications

References 20 publications

Low‐temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

Low‐temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

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