Low-temperature deposition of highly crystallized silicon films on Al-coated polyethylene napthalate by inductively coupled plasma CVD

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

“…For detailed study of the variation of the degree of crystallinity of the deposited films, we have deconvoluted the dominant Raman peak into three independent Gaussian peaks: a crystalline silicon narrow peak near 520 cm −1 , an intermediate peak near 500-510 cm −1 (attributed to small crystallites or grain boundaries), and a broad peak centered at 480 cm −1 (characteristic of the amorphous silicon phase) [23,25]. Fig.…”

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

“…With the growing reduction in dimensions of optoelectronic devices, low damage and anisotropic etching processes, such as ICP, are highly desirable for device patterning [1][2][3][4]. Even though ICP-introduced structural damage may exist in semiconductors, tremendous efforts have been devoted to minimized or recovery the damage [5,6].…”