Low-temperature combustion synthesis and UV treatment processed p-type Li:NiO<sub>x</sub> active semiconductors for high-performance electronics

This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturallycooling process from 200 to 100°C , called a "temperature gradient ZnO (TG-ZnO)"). After optimized annealing treatment at 300°C , the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility (μsat) of 11.8 cm 2 /Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio (Ion/Ioff) of 1.9×10 7 , a small subthreshold swing (SS) of 175 mV/decade and a threshold voltage (Vth) of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100°C-ZnO and lower oxygen vacancies than 200°C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory Ion/Ioff ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility.

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“…The optical band gap can be obtained from the light transmittance with the following two equations [17], [18]:…”

Section: Resultsmentioning

confidence: 99%

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Che

Zeng

Yang

et al. 2020

IEEE J. Electron Devices Soc.

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“…where W and L are the channel width and length, respectively. C i is the capacitance per unit area of the insulator; V th is threshold voltage; V G is gate voltage [18], [19]. The sheet resistance was measured by Keithley 8400.…”

Section: Methodsmentioning

confidence: 99%

Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

Yang

et al. 2020

IEEE J. Electron Devices Soc.

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The high performance Hf doped ZnO (Hf-ZnO) flexible thin film transistors (TFTs) were fabricated using Ag NWs as gate electrode and high-k HfO 2 as dielectric. The field effect mobility of Hf-ZnO is 14.7 cm 2 /Vs, I on /I off ratio is more than 10 6 , and the subthreshold swing is about 0.26 V/dec. Furthermore, after 5000 bending cycles test, the TFTs with Ag NWs still maintain a superior performance, such as the high mobility of 12.6 cm 2 /Vs and the small subthreshold swing of 0.33 V/dec. The operating voltage of Hf-ZnO is only 5 V, showing the great potential of application in low-powered devices. We also fabricated the resistor-loaded inverter based on the flexible TFTs. The shift of input voltage is negligible with different supplied voltages, indicating the highly-stable property of the inverter. As a result, the low consumption optoelectronics provide great inspiration for researchers to construct the next generation high performance wearable and flexible devices. INDEX TERMS Low-voltage, Ag nanowire, transistors, logic circuit.

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“…The exothermic combustion reaction results in intense heat being generated inside the film, which helps to form the M‐O‐M frameworks and remove residual organic components. The temperature required only needs to be above the ignition temperature, which is sufficient to form crystalline NiO x but is low enough to be compatible with polymer substrates 101,114 …”

Section: Chemical Deposition Of Nickel Oxide Thin Filmsmentioning

confidence: 99%

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Napari

Huq

Hoye

et al. 2020

InfoMat

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Nickel oxide (NiOx), a p‐type oxide semiconductor, has gained significant attention due to its versatile and tunable properties. It has become one of the critical materials in wide range of electronics applications, including resistive switching random access memory devices and highly sensitive and selective sensor applications. In addition, the wide band gap and high work function, coupled with the low electron affinity, have made NiOx widely used in emerging optoelectronics and p‐n heterojunctions. The properties of NiOx thin films depend strongly on the deposition method and conditions. Efficient implementation of NiOx in next‐generation devices will require controllable growth and processing methods that can tailor the morphological and electronic properties of the material, but which are also compatible with flexible substrates. In this review, we link together the fundamental properties of NiOx with the chemical processing methods that have been developed to grow the material as thin films, and with its application in electronic devices. We focus solely on thin films, rather than NiOx incorporated with one‐dimensional or two‐dimensional materials. This review starts by discussing how the p‐type nature of NiOx arises and how its stoichiometry affects its electronic and magnetic properties. We discuss the chemical deposition techniques for growing NiOx thin films, including chemical vapor deposition, atomic layer deposition, and a selection of solution processing approaches, and present examples of recent progress made in the implementation of NiOx thin films in devices, both on rigid and flexible substrates. Furthermore, we discuss the remaining challenges and limitations in the deposition of device‐quality NiOx thin films with chemical growth methods.

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Low-temperature combustion synthesis and UV treatment processed p-type Li:NiO_x active semiconductors for high-performance electronics

Abstract: The p-type Li:NiOx thin films were successfully fabricated through the SUV route at 150 °C.

Cited by 41 publications

References 48 publications

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

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Low-temperature combustion synthesis and UV treatment processed p-type Li:NiOx active semiconductors for high-performance electronics

Abstract: The p-type Li:NiOx thin films were successfully fabricated through the SUV route at 150 °C.

Cited by 41 publications

References 48 publications

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

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Low-temperature combustion synthesis and UV treatment processed p-type Li:NiO_x active semiconductors for high-performance electronics