Low-Temperature Atomic Layer Deposition of Cobalt Oxide Thin Films Using Dicobalt Hexacarbonyl tert-Butylacetylene and Ozone

Han, Bo; Choi, Kyu Ha; Park, Kwangmin; Han, Won Seok; Lee, Wonjun

doi:10.1149/2.008202esl

Cited by 32 publications

(23 citation statements)

References 20 publications

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“…The growth rate was saturated for CpCo(CO) 2 exposures over 3 Â 10 5 L (Langmuir, 1 L ¼ 10 À6 TorrÁs) for a fixed O 3 /O 2 exposure of 5 Â 10 8 L, as shown in Fig. 12 Figure 2 indicates the growth rates of the deposited films at different temperatures based on TEM observations. It also was nearly saturated with O 3 /O 2 exposures over 1 Â 10 9 L for a fixed CpCo(CO) 2 exposures of 5 Â 10 6 L, as shown in Fig.…”

Section: Resultsmentioning

confidence: 93%

“…Cobalt oxide films were prepared by ALD using Co(thd) 2 and ozone (O 3 ) at 114-307 C, and the growth rate was 0.02 nm/cycle. 12 Cobalt oxide films were grown in atomic layer deposition mode at 68 C with a growth rate of 0.08 nm/cycle and showed excellent step coverage. In the previous work, we used CCTBA and ozone to deposit cobalt oxide films.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures

Han

Choi

Park

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inDysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition Atomic layer deposition of zinc indium sulfide films: Mechanistic studies and evidence of surface exchange reactions and diffusion processes J. Vac. Sci. Technol. A 31, 01A131 (2013); 10.1116/1.4768919 Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth J. Vac. Sci. Technol. A 31, 01A106 (2013); 10.1116/1.4756906An atomic layer deposition reactor with dose quantification for precursor adsorption and reactivity studies Rev. Sci. Instrum.The authors report the atomic layer deposition (ALD) of cobalt oxide thin films at 50-150 C using alternating exposures to cyclopentadienylcobalt dicarbony [CpCo(CO) 2 ] and ozone. The growth rates were 0.08-0.11 nm/cycle and the ALD cobalt oxide films showed excellent step coverage. With increasing substrate temperature to 200 C, however, the growth rate sharply increased and cobalt-rich film was deposited owing to thermal decomposition of the cobalt precursor. The reaction of the cobalt precursor molecule with the growing film surface was investigated by in situ quartz crystal microbalance (QCM), and the QCM result also indicates that CpCo(CO) 2 thermally decomposes to cobalt on the growth surface at 200 C.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures

Han

Choi

Park

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…20 A majority of the reported ALD cobalt oxide processes rely on the use of either oxygen plasma or ozone to remove the ligands of the metalorganic or organometallic cobalt precursors. [21][22][23][24][25][26][27][28][29] Due to the high oxidative power of O2 plasma and O3, the ligand combustion approach leads to oxidation of cobalt to Co 3+ and the subsequent formation of Co3O4 films. In order to deposit CoO films, the use of highly oxidizing co-reactants should therefore be avoided.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA)2(THF) and H2O

Iivonen

Kaipio

Hatanpää

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In this work, we have studied the applicability of Co(BTSA)2(THF) (BTSA = bis(trimethylsilyl)amido) (THF = tetrahydrofuran) in atomic layer deposition (ALD) of cobalt oxide thin films. When adducted with THF, the resulting Co(BTSA)2(THF) showed good volatility and could be evaporated at 55 °C, which enabled film deposition in the temperature range of 75-250 °C. Water was used as the co-reactant, which led to the formation of Co(II) oxide films. The saturative growth mode characteristic to ALD was confirmed with respect to both precursors at deposition temperatures of 100 and 200 °C. According to grazing incidence X-ray diffraction measurements, the films contain both cubic rock salt and hexagonal wurtzite phases of CoO. X-ray photoelectron

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“…Atomic layer deposition and CVD processes utilizing CCTBA have been reported for depositing cobalt metal (as a copper diffusion barrier, a seed layer, and for subsequent silicidation) 58–64 and cobalt oxide films. 65 Although CCTBA is a liquid, it exhibits a relatively low vapor pressure at room temperature and the tendency is to deliver CCTBA at elevated temperatures to increase partial pressure. 60,63,65 However, there is a potential for CCTBA to decompose if it is maintained at elevated temperatures for prolonged periods.…”

Section: Introductionmentioning

confidence: 99%

“…65 Although CCTBA is a liquid, it exhibits a relatively low vapor pressure at room temperature and the tendency is to deliver CCTBA at elevated temperatures to increase partial pressure. 60,63,65 However, there is a potential for CCTBA to decompose if it is maintained at elevated temperatures for prolonged periods. Decomposition can result in the evolution of CO, as well as other compounds.…”

Section: Introductionmentioning

confidence: 99%

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

et al. 2017

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A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso μ-η-(Bu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorption by CCTBA vapor in the C≡O stretching spectral region and utilized a stable, broadband IR filament source, an optical chopper to modulate the source, a bandpass filter for wavelength isolation, and an InSb detector. The optical system was calibrated by selecting a calibration factor to convert CCTBA absorbance to a partial pressure that, when used to calculate CCTBA flow rate and CCTBA mass removed from the ampoule, resulted in an optically determined mass that was nominally equal to a gravimetrically-determined mass. In situ Fourier transform infrared (FT-IR) spectroscopy was performed simultaneously with the NDIR gas analyzer measurements under selected conditions in order to characterize potential spectroscopic interferences. Interference due to CO evolution from CCTBA was found to be small under the flow conditions employed here. A CCTBA minimum detectable molecular density as low as ≈3 × 10cm was calculated (with no signal averaging and for a sampling rate of 200 Hz). While this NDIR gas analyzer was specifically tested for CCTBA, it is suitable for characterizing the vapor delivery of a range of carbonyl-containing precursors.

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Low-Temperature Atomic Layer Deposition of Cobalt Oxide Thin Films Using Dicobalt Hexacarbonyl tert-Butylacetylene and Ozone

Cited by 32 publications

References 20 publications

Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures

Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures

Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA)2(THF) and H2O

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

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