IEEE Electron Device Lett.
 1986
DOI: 10.1109/edl.1986.26387
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Low-resistance ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As modulation-doped structures obtained by halogen lamp annealing

Won‐Pyo Hong1,
Kwang Seok Seo2,
Pallab Bhattacharya3
et al.
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Cited by 13 publications
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References 6 publications
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Ohmic contact to n-type bulk and δ doped Al0.3Ga0.7As/GaAs MODFET type heterostructures and its applications

Jin
1
1991
Solid-State Electronics
23
3
9
1
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Ohmic contact to n-type bulk and δ doped Al0.3Ga0.7As/GaAs MODFET type heterostructures and its applications

Jin
1
1991
Solid-State Electronics
23
3
9
1
View full textAdd to dashboardCite

Stability and noise of PdGeAgAu ohmic contacts to InGaAsInAlAs high electron mobility transistors

Tardy1,
Rojo-Romeo2,
Viktorovitch3
et al. 1996
Solid-State Electronics
10
1
3
0
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Fabrication of 0.1-μm planar-doped pseudomorphic HEMT's using a PECVD silicon nitride assisted process

Zou
1
,
Raedt
2
,
Hove
3
et al. 1992
Microelectronic Engineering
1
0
2
0
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