Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors

Linten, Dimitri; Sun, Xiao Wei; Carchon, G.; Jeamsaksiri, Wutthinan; Mercha, A.; Ramos, J.; Jenei, S.; Wambacq, Piet; Dehan, M.; Aspemyr, Lars; Scholten, A.J.; Decoutere, Stefaan; Donnay, S.; Raedt, W. De

doi:10.1109/jssc.2005.848144

Cited by 24 publications

(4 citation statements)

References 20 publications

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“…The fact that our VCO achieves the best PN (both for simulated and measured) and a very high FOM [23] should be noted. In detail, the achieved FOM at the central frequency is equal to 189.5 dBc/Hz at 100 kHz and 194.1 dBc/Hz at 1 MHz, which are the best results if compared with the previous works both for active [24,25] and passive inductors (both for simulated and measured) and very close to those obtained in the case of VCO based on high-Q passive inductors realized with additional steps in the fabrication process [4]. The layout of the test-chip is reported in Figure 14.…”

Section: Vco Design For 5-6 Ghz Wlanssupporting

confidence: 76%

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LC‐active VCO for CMOS RF transceivers

Zito

Pepe

2009

Circuit Theory & Apps

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SUMMARYA novel fully integrated CMOS LC tank VCO is presented. The LC tanks are implemented by exploiting the active circuit 'boot-strapped inductor' (BSI), which behaves like a high-quality factor inductor. Particularly, the LC tanks have been implemented by introducing a new version of the CMOS BSI circuit, which provides better versatility and design reliability.In order to verify the effectiveness of such an approach, a case study for 5-6 GHz direct-conversion multi-standard WLAN transceivers is presented. The VCO has been designed in a 0.35 m standard CMOS technology. The new BSI exhibits a high-quality factor (higher than 25 over the all frequency range) and provides a high selectivity without introducing a relevant excess of noise, for a better spectral purity and a lower phase noise (PN) of the VCO. The overall VCO circuit consumes 9 mW. The VCO produces an oscillation in the tuning range from 4.91 to 5.93 GHz (nearly equal to 19%). The circuit exhibits a PN of −129 dBc/Hz at 1 MHz of frequency offset from the central frequency (5.4 GHz) and a FOM equal to 189.5 dBc/Hz at 100 kHz and 194.1 dBc/Hz at 1 MHz of frequency offset, respectively.

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Section: Vco Design For 5-6 Ghz Wlanssupporting

confidence: 76%

“…Examples of high-Q passive inductors have been presented in literature [4]. These inductors are realized by means of additional steps in the fabrication process, which cause a dramatic increase of the chip fabrication costs.…”

Section: Introductionmentioning

confidence: 99%

LC‐active VCO for CMOS RF transceivers

Zito

Pepe

2009

Circuit Theory & Apps

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“…On the other hand, ferromagnetic alloy film must be isolated from the coils due to its low resistivity, which limits its magnetic flux enhancing effect. Other methods to improve the inductors' performance are also discussed in [26][27][28][29][30][31]. But most of these magnetic materials have their limitations.…”

Section: Introductionmentioning

confidence: 99%

Application of Ferrite Nanomaterial in RF On‐Chip Inductors

Cai

Zhan

Yang

et al. 2013

Journal of Nanomaterials

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Several kinds of ferrite-integrated on-chip inductors are presented. Ferrite nanomaterial applied in RF on-chip inductors is prepared and analyzed to show the properties of high permeability, high ferromagnetic resonance frequency, high resistivity, and low loss, which has the potential that will improve the performance of RF on-chip inductors. Simulations of different coil and ferrite nanomaterial parameters, inductor structures, and surrounding structures are also conducted to achieve the trend of gains of inductance and quality factor of on-chip inductors. By integrating the prepared ferrite magnetic nanomaterial to the on-chip inductors with different structures, the measurement performances show an obvious improvement even in GHz frequency range. In addition, the studies of CMOS compatible process to integrate the nanomaterial promote the widespread application of magnetic nanomaterial in RF on-chip inductors.

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“…Other technologies more compatible with IC fabrication that enable high Q inductors have been reported. High quality wafer-level packaging ͑WLP͒ inductors [16][17][18] offers novel opportunities for the realization of high-quality on-chip inductors needed in rf front ends. For WLP inductors, a thin low-k dielectric layer ͑benzocy-clobutene͒ reduces substrate losses and the parasitic capacitance to the patterned ground shield.…”

Section: Introductionmentioning

confidence: 99%

High-Q micromachined three-dimensional integrated inductors for high-frequency applications

Weon

Jeon

Mohammadi

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Three-dimensional micromachined inductors are fabricated on high-resistivity ͑10 k⍀ cm͒ and low-resistivity ͑10 ⍀ cm͒ Si substrates using a stressed metal technology. On high-resistivity Si substrate with low-k dielectric material ͑SU-8™͒, this technology achieves a quality factor Q of 75 for a 1 nH inductor at frequencies around 4 GHz and a self-resonant frequency f sr above 20 GHz. Using Si bulk micromachining to etch away the low-resistivity Si substrate with a combination of deep reactive ion etching and tetramethyl ammonium hydroxide etching methods, a 1.2 nH inductor achieves a peak quality factor Q of 140 at a frequency of 12 GHz with a self-resonant frequency f sr above 40 GHz. The dependence of high-frequency performance on the inductor's variables, such as the number of turns, turn-to-turn gap, and substrate type, has been investigated. Excellent performance is achieved by removing the substrate due to the complete elimination of substrate losses and the reduction of the parasitic capacitance. This technology is simple and provides high performance integrated inductors on Si or compound-semiconductor platforms.

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Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors

Cited by 24 publications

References 20 publications

LC‐active VCO for CMOS RF transceivers

LC‐active VCO for CMOS RF transceivers

Application of Ferrite Nanomaterial in RF On‐Chip Inductors

High-Q micromachined three-dimensional integrated inductors for high-frequency applications

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