Low-Noise Speed-Optimized Large Area CMOS Avalanche Photodetector for Visible Light Communication

Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

“…In addition, expressions for the analytical mean gain and excess noise factor are presented while taking into account different absorption profiles using an exponential decay function. Moreover, previously reported F for the P+/N-well CMOS APD [9] are compared with that analytically calculated under mixed injection case and good agreement is shown.…”

“…In 1992, Hayat et al formulated an analytical model [10] for avalanche multiplication that allowed the determination of the excess noise factor in the case of mixed injection while also incorporating the effect of dead space, which is the minimum distance a carrier must travel after an impact ionization before it may effect another ionization. In 2017, Hossain et al used the numerical approach to further calculate the excess noise factor for Si APDs in the case of distributed mixed injection [9], where the photon absorption profile within the MR was taken into account. Experiments have also shown the wavelength dependence of the excess-noise factor; moreover, good agreement between numerical solutions of the analytical model and experiments on the role of mixed injection has been shown [5], [8]- [9][10] [11] [12].…”

“…In 2017, Hossain et al used the numerical approach to further calculate the excess noise factor for Si APDs in the case of distributed mixed injection [9], where the photon absorption profile within the MR was taken into account. Experiments have also shown the wavelength dependence of the excess-noise factor; moreover, good agreement between numerical solutions of the analytical model and experiments on the role of mixed injection has been shown [5], [8]- [9][10] [11] [12]. The experiments and the numerically calculated F under mixed injection were also compared with that calculated using the McIntyre's formula [2], which assumes edge injection.…”

Indoor visible light communications, networking, and applications

“…A standard PIN (positive-intrinsic-negative) photodiode is typically used. However, other PDs such as avalanche photodiodes (APDs) are an attractive alternative due to their high responsivity [80][81][82][83][84]. Unfortunately, the bandwidth of an APD is limited, which is crucial for VLC systems.…”

Analytical Formulas for Mean Gain and Excess Noise Factor in InAs Avalanche Photodiodes

“…While = 0.02 for silicon APDs with wide junctions and low electric field, for high-speed CMOS compatible silicon APDs [15]- [16][17] [18], k approaches 1 as we reach submicrometer thicknesses [19]. When compared with the case of ≈ 0, and for a given thickness of avalanche region, this leads to an increase in the buildup time (defined as the time required for all the impact ionizations to complete, due to additional chain of ionizations from the presence of holes) as well as the tunneling current.…”