2015
DOI: 10.1364/oe.23.012152
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Low-loss silicon nitride waveguide hybridly integrated with colloidal quantum dots

Abstract: Silicon nitride waveguides with a monolayer of colloidal quantum dots embedded inside were fabricated using a low-temperature deposition process and an optimized dry etching step for the composite layers. We experimentally demonstrated the luminescence of the embedded quantum dots is preserved and the loss of these hybrid waveguide wires is as low as 2.69dB/cm at 900nm wavelength. This hybrid integration of low loss silicon nitride photonics with active emitters offers opportunities for optical sources operati… Show more

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Cited by 33 publications
(50 citation statements)
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“…48 To enhance the modulation depth reached in photonic devices, the QDs or nanoplatelets can be implanted into the silicon nitride waveguide, as has been demonstrated in Ref. 36. The sideband pump-probe method we developed proved to be a suitable tool for the quantitative measurement of small changes in the imaginary and real parts of the refractive index.…”
Section: Discussionmentioning
confidence: 99%
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“…48 To enhance the modulation depth reached in photonic devices, the QDs or nanoplatelets can be implanted into the silicon nitride waveguide, as has been demonstrated in Ref. 36. The sideband pump-probe method we developed proved to be a suitable tool for the quantitative measurement of small changes in the imaginary and real parts of the refractive index.…”
Section: Discussionmentioning
confidence: 99%
“…[30][31][32] Additionally, a range of hybrid photonic devices based on silicon nitride structures has been demonstrated. 10,[33][34][35][36][37] In contrast to pure silicon, the material does not display large intrinsic nonlinearities or a substantial free carrier absorption 38 and therefore allows us to observe the nonlinear response of the QDs without waveguide-induced background. A schematic of the sample is displayed in Fig.…”
Section: Samplesmentioning
confidence: 99%
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“…In addition, to enable effective coupling between the emission and the optical modes, more specifically in optical cavities, the light field in the Si 3 N 4 components should maximally overlap with the QD emitters. In our study, we have developed a fully inorganic and low-loss Si 3 N 4 -QD hybrid photonic platform by using a low-temperature (120°C-270°C) plasma enhanced chemical vapor deposition process and an optimized dry etching step, and demonstrated loss as low as 2.7 dB∕cm at 900 nm wavelength for waveguides with embedded QDs [49]. [50].…”
Section: B Colloidal Quantum Dot Integration On Si 3 N 4 Picsmentioning
confidence: 99%