1982
DOI: 10.1016/0092-640x(82)90002-x
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Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflection

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Cited by 1,146 publications
(319 citation statements)
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“…with τ(E) the absorption depth for silicon for X-ray photon energy E as derived from Henke et al (1982). At the spot of the X-ray photon absorption, an amount of electric charge is released proportional to the incident energy of the photon.…”
Section: Detector Modelmentioning
confidence: 99%
“…with τ(E) the absorption depth for silicon for X-ray photon energy E as derived from Henke et al (1982). At the spot of the X-ray photon absorption, an amount of electric charge is released proportional to the incident energy of the photon.…”
Section: Detector Modelmentioning
confidence: 99%
“…It can be seen that the X-ray induced signal is about a factor of five larger than the background gas ionisation rate. Absorption of high energy X-rays in molecules and solids is in fact atomic-like for energies greater than 50 eV (Henke et al 1982). This means that one can take the cross section for absorption by individual elemental atoms and sum over the number of such atoms in the target.…”
Section: Resultsmentioning
confidence: 99%
“…After a scattering, the new photon energy is just given by = 0 /(1 + 0 mc 2 (1 − cos θ s )). The absorption of X-ray photons, which is the dominant process below ∼10 keV was modeled using modern solar photospheric abundances (Asplund et al 2009) and cross-sections (Henke et al 1982;Balucinska-Church & McCammon 1992) for the most important elements H, He, C, N, O, Ne, Na, Mg, Al, Si, S, Cl, Ar, Ca, Cr, Fe and Ni. For X-ray energies >10 keV, photoelectric absorption was approximated as σ a ( 0 ) ∼ −3 0 (Magdziarz & Zdziarski 1995).…”
Section: Spatial Characteristics Of the Primary Backscattered And Obmentioning
confidence: 99%