Low dark current III–V on silicon photodiodes by heteroepitaxy

Sun, Keye; Jung, Daehwan; Shang, Chen; Liu, Alan; Morgan, John D.; Zang, Jizhao; Li, Qinglong; Klamkin, Jonathan; Bowers, John E.; Beling, Andreas

doi:10.1364/oe.26.013605

Cited by 38 publications

(14 citation statements)

References 23 publications

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“…The average of this dark current is 11.48 pA or 1.84 µA• cm −2 , with a standard deviation of 4.49 pA or 0.72 µA• cm −2 . The dark current is very low for an integrated III-V photodiode [27,28], due to the larger bandgap of GaAs. Nevertheless, the dark current of the devices are on par or lower than that of commercial solutions [29].…”

Section: Resultsmentioning

confidence: 99%

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts¹,

Kumari²,

Uvin³

et al. 2020

Opt. Express

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We demonstrate waveguide-detector coupling through the integration of GaAs p-in photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

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Section: Resultsmentioning

confidence: 99%

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts¹,

Kumari²,

Uvin³

et al. 2020

Opt. Express

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“…Monolithical integration of light sources and detectors with Si-Ph PICs has been demonstrated in lab, but it is currently not readily accessible for most users [98][99][100][101][102].…”

Section: Near-infraredmentioning

confidence: 99%

Opportunities for photonic integrated circuits in optical gas sensors

Hänsel

Heck

2020

J. Phys. Photonics

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In this article, the potential of photonic integrated circuits (PICs) for modern gas sensing applications is discussed. Optical detection systems can be found at the high-end of the currently available gas detectors, and PIC-based optical spectroscopic devices promise a significant reduction in size and cost. The performance of such devices is reviewed here. This discussion is not limited to one semiconductor platform, but includes several available platforms operating from the visible wavelength range up to the long wavelength infrared. The different platforms are evaluated regarding their capabilities in creating a fully integrated spectroscopic setup, including light source, interaction cell and detection unit. Advanced spectroscopy methods are assessed regarding their PIC compatibility. Based on the comparison of PICs with state-of-the-art bulk optical devices, it can be concluded that they can fill the application space of compact and low cost optical gas sensors.

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“…The bias applied for these measurements was −1 V. Both dark current levels are significantly higher than that typically reported for photodiodes. [ 25–27 ] Fabrication was not optimized, and not specifically crafted for photodiode applications. However, dark current measurements do reveal device performance aspects such as leakage current and activation energy.…”

Section: Lasing Characteristicsmentioning

confidence: 99%

Lasing Characteristics and Reliability of 1550 nm Laser Diodes Monolithically Grown on Silicon

Shi

Pinna

Zhao

et al. 2020

Physica Status Solidi (a)

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Room‐temperature continuous wave (RT‐CW) electrically pumped 1550 nm indium phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide‐semiconductor (CMOS) compatible silicon (Si) substrates by direct heteroepitaxy. Dynamic properties are investigated by gain switching and small signal modulation measurements. A maximum 3 dB bandwidth of 5.3 GHz is demonstrated, along with a narrow optical pulse with a width of 1.5 ns. The dark current density of 490 mA cm−2 at −1 V bias is an order of magnitude higher than identical devices grown and fabricated on native InP substrates. Also, reliability measurements and failure analysis are carried out for the lasers on Si. The lasers operate stably over 200 hours (h) at 10 °C under CW operation without apparent change in threshold or output power. In sharp contrast, a rapid failure occurs at 60 °C under pulsed operation following 5.6 h of aging. To further improve device characteristics for lasers on Si, the dislocation density of the InP template is reduced by introducing a 2 μm‐thick compositionally graded In0.4Ga0.6 As buffer. The resulting surface defect density is as low as 4.5 × 107 cm−2, which is expected to improve the performance and reliability of long wavelength lasers grown directly on Si.

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Low dark current III–V on silicon photodiodes by heteroepitaxy

Cited by 38 publications

References 23 publications

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Opportunities for photonic integrated circuits in optical gas sensors

Lasing Characteristics and Reliability of 1550 nm Laser Diodes Monolithically Grown on Silicon

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