Low breakdown voltage CMOS compatible p-n junction avalanche photodiode

Hossain, Md. Mottaleb; Zarkesh-Ha, Payman; David, J.P.R.; Hayat, Majeed M.

doi:10.1109/ipcon.2014.6995302

Cited by 6 publications

(5 citation statements)

References 4 publications

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“…where E is the electric field and the A, B, and m are material-dependent parameters listed in [12], [13]. The electric field and the depletion width considered in the DSMT model are calculated by solving Poissons equation and standard formula [9].…”

Section: Simulation and Measurement Resultsmentioning

confidence: 99%

Speed optimized large area avalanche photodetector in standard CMOS technology for visible light communication

Ray

Hella

Hossain

et al. 2014

IEEE SENSORS 2014 Proceedings

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This paper presents a speed-optimized large area avalanche photodetector (APD) in standard CMOS technology for visible light communication applications (VLC). Recent research efforts have reported high speed CMOS APDs with low breakdown voltage for considerably small photodiode sizes, which limits the APD usage in low cost optical receivers for VLC. The speed of a large-area APD dramatically decreases due to increased transit time of diffusive carriers in charge neutral regions. The proposed technique divides the active area into multiple subsections to decrease transit time and increase speed. A prototype 350×350 µm 2 APD is fabricated in 0.13-µm CMOS technology. The photodetector achieves a maximum gain of 7.6 K at 11 V reverse bias, showing excellent agreement with simulation results as calculated using the nonlocal impact ionization model based on recursive dead-space multiplication theory (DSMT). 2-D device level simulations validate the speed enhancement by comparing the small signal simulation results of three P+/N-well photodiodes with the same area detector composed of different number of sub-sections.

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Section: Simulation and Measurement Resultsmentioning

confidence: 99%

Speed optimized large area avalanche photodetector in standard CMOS technology for visible light communication

Ray

Hella

Hossain

et al. 2014

IEEE SENSORS 2014 Proceedings

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“…The range of materials and multiplication widths for which the CM approximation may be used to predict the mean gain and excess noise factor are listed in Table I. The range of widths listed here are reasonable for thin APD devices such as the silicon CMOS-compatible pn devices developed in [15] by Hossain et al…”

Section: Formula For Excess Noise Factormentioning

confidence: 88%

“…By substituting these proposed solutions in (14) and (15), comparing coefficients, and using the boundary conditions, z 2 (w − d) = y 2 (d) = 1, we obtain twelve equations with ten unknowns. By eliminating the redundant equations and solving the remaining independent equations, we find that the higher-order coefficients p 4 , p 5 , q 4 and q 5 are zero, which Fig.…”

Section: Formula For Excess Noise Factormentioning

confidence: 99%

On the analytical formulation of excess noise in avalanche photodiodes with dead space

et al. 2016

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Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for avalanche photodiodes using the dead-space multiplication theory in the regime of small multiplication width and high applied electric field. The accuracy of the approximation is investigated by comparing it to the exact numerical method using recursive coupled integral equations and it is found that it works for dead spaces up to 15% of the multiplication width, which is substantial. The approximation is also tested for real materials such as GaAs, InP and Si for various multiplication widths, and the results found are accurate within ∼ 15% of the actual noise, which is a significant improvement over the local-theory noise formula. The results obtained for the mean gain also confirm the recently reported relationship between experimentally determined local ionization coefficients and the enabled non-local ionization coefficients.

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“…The special-case expressions in (15) and (16) are the well-known McIntyre formulas (equations (21) and (24) in [20]).…”

Section: A Formula For Mixed-injection Mean Gainmentioning

confidence: 99%

Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

Hossain

David

Hayat

2019

J. Lightwave Technol.

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Low breakdown voltage CMOS compatible p-n junction avalanche photodiode

Cited by 6 publications

References 4 publications

Speed optimized large area avalanche photodetector in standard CMOS technology for visible light communication

Speed optimized large area avalanche photodetector in standard CMOS technology for visible light communication

On the analytical formulation of excess noise in avalanche photodiodes with dead space

Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

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