2004
DOI: 10.1021/jp0474125
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Long and Oriented Single-Walled Carbon Nanotubes Grown by Ethanol Chemical Vapor Deposition

Abstract: We report the controlled chemical vapor deposition (CVD) growth of single-walled carbon nanotubes (SWNTs), using ethanol as the carbon feedstock and bimetallic CoMo-doped mesoporous silica (SBA16) as the catalyst. Ultralong (up to 4 mm) and horizontally aligned SWNTs can be grown directly on flat substrates or across slits (20−120 μm apart), and the orientation of the nanotubes is always parallel to the gas flow direction. The control of the growth direction and length also enables us to fabricate parallel nan… Show more

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Cited by 141 publications
(113 citation statements)
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“…Au (50 nm) on Cr (5 nm) pads, which are separated by 20 m, form the contact to an individual single-walled carbon nanotube (SWNT). The nanotubes were grown by a chemical vapor deposition (CVD) process described elsewhere (12,13). The nanotube is then oxidatively cut by using an ultrafine lithographic process that produces a very small gap between the nanotube ends (13)(14)(15).…”
Section: Resultsmentioning
confidence: 99%
“…Au (50 nm) on Cr (5 nm) pads, which are separated by 20 m, form the contact to an individual single-walled carbon nanotube (SWNT). The nanotubes were grown by a chemical vapor deposition (CVD) process described elsewhere (12,13). The nanotube is then oxidatively cut by using an ultrafine lithographic process that produces a very small gap between the nanotube ends (13)(14)(15).…”
Section: Resultsmentioning
confidence: 99%
“…Growth of Single-Walled Carbon Nanotubes (SWCNTs): The growth of SWCNTs was performed using a typical ethanol CVD method [33,37,43]. The DPN-patterned substrates were placed in the middle of a quartz tube furnace with 1 inch diameter.…”
Section: Methodsmentioning
confidence: 99%
“…We examined individual single-walled carbon nanotubes prepared by ambient chemical vapor deposition methods using a modified fast-heating process [63]. The nanotubes were grown directly over open slits of 20-30 μm width cut in SiO 2 /Si substrates.…”
Section: A Sample Preparation and Device Fabricationmentioning
confidence: 99%