Location of the valence band maximum in the band structure of anisotropic 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>1</mml:mn><mml:msup><mml:mi>T</mml:mi><mml:mo>′</mml:mo></mml:msup><mml:mo>−</mml:mo><mml:msub><mml:mi>ReSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Eickholt, Philipp; Noky, Jonathan; Schwier, Eike F.; Shimada, Kenya; Miyamoto, Koji; Okuda, Takashi; Datzer, Christian; Drüppel, Matthias; Krüger, Peter; Rohlfing, Michael; Donath, M.

doi:10.1103/physrevb.97.165130

Cited by 14 publications

(30 citation statements)

References 63 publications

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“…More recently, Eickholt et al . reported two VBM of ReSe 2 33 . One of them is at Z and the other is away from Z.…”

Section: Resultsmentioning

confidence: 99%

“…Our data show a striking difference from what were reported in previous experimental and theoretical studies 29,30,32 . (1) The valence band maximum (VBM) is located at the Z-point for both systems, while it was reported in a previous ARPES study reported that VBM of ReSe 2 may be located at non-high-symmetric momentum point 30,33 . (2) The dispersion of ReSe 2 is much smaller than that of published quasiparticle band structure within the LDA + GdW approximation 32 .…”

Section: Introductionmentioning

confidence: 81%

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Strong One-Dimensional Characteristics of Hole-Carriers in ReS2 and ReSe2

Kim

Kyung

Denlinger

et al. 2019

Sci Rep

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Each plane of layered ReS 2 and ReSe 2 materials has 1D chain structure, from which intriguing properties such as 1D character of the exciton states and linearly polarized photoluminescence originate. However, systematic studies on the 1D character of charge carriers have not been done yet. Here, we report on systematic and comparative studies on the energy-momentum dispersion relationships of layered transition metal dichalcogenides ReS 2 and ReSe 2 by angle resolved photoemission. We found that the valence band maximum or the minimum energy for holes is located at the high symmetric Z-point for both materials. However, the out-of-plane ( ) dispersion for ReSe 2 (20 meV) is found to be much smaller than that of ReS 2 (150 meV). We observe that the effective mass of the hole carriers along the direction perpendicular to the chain is about 4 times larger than that along the chain direction for both ReS 2 and ReSe 2 . Remarkably, the experimentally measured hole effective mass is about twice heavier than that from first principles calculation for ReS 2 although the in-plane anisotropy values from the experiment and calculations are comparable. These observation indicate that bulk ReS 2 and ReSe 2 are unique semiconducting transition metal dichalcogenides having strong one-dimensional characters.

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“…More recently, Eickholt et al . reported two VBM of ReSe 2 33 . One of them is at Z and the other is away from Z.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 81%

Strong One-Dimensional Characteristics of Hole-Carriers in ReS2 and ReSe2

Kim

Kyung

Denlinger

et al. 2019

Sci Rep

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show abstract

“…2(b) for comparison of the bulk and two-dimensional Brillouin zones of ReSe 2 (the latter is a projection of the former along the reciprocal space c * axis). These special directions correspond to, for example, the polarization directions of the two band-edge excitons in ReSe 2 [44][45][46] and were identified as the directions of maximum and minimum dispersion in the studies of bulk material [25,47]. We present the measured valence-band dispersions for the monolayer (1L) flake shown in Fig.…”

Section: B Arpes Results From Atomically Thin Resementioning

confidence: 99%

Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one-dimensional electronic character inReSe2

et al. 2021

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We study the valence band structure of ReSe 2 crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from ∼200 meV for the bulk to ∼80 meV for monolayer. This demonstrates increase of in-plane anisotropy induced by changes in the interlayer coupling and suggests progressively more one-dimensional character of electronic states in few-layer rhenium dichalcogenides.

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“…Another study found two energetically degenerate VBM from ARPES measurements, one at Z and another off the symmetry points. 37 The same authors conducted theoretical calculations of the band structure and found that the nature of the band gap depends on the functional employed (indirect for GGA, direct for GW). Several other studies that take only high-symmetry k-paths into account for evaluating the band structure predict either direct or indirect band gaps for ReSe2 near the Z or Γ point.…”

Section: First-principle Calculationsmentioning

confidence: 99%

Pressure dependence of direct optical transitions in ReS2 and ReSe2

et al. 2019

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We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio calculations within the density functional theory. Experimental pressure coefficients for the two most dominant excitonic transitions are obtained and compared with those predicted by the calculations. We assign the transitions to the Z k-point of the Brillouin zone and other k-points located away from highsymmetry points. The origin of the pressure coefficients of the measured direct transitions is discussed in terms of orbital analysis of the electronic structure and van der Waals interlayer interaction. The anisotropic optical properties are studied at high pressure by means of polarization-resolved photoreflectance measurements. 1. The coordinates of the high-symmetry k-points can be found in the S.I. (Table S1).

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Location of the valence band maximum in the band structure of anisotropic 1T′−ReSe2

Cited by 14 publications

References 63 publications

Strong One-Dimensional Characteristics of Hole-Carriers in ReS2 and ReSe2

Strong One-Dimensional Characteristics of Hole-Carriers in ReS2 and ReSe2

Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one-dimensional electronic character inReSe2

Pressure dependence of direct optical transitions in ReS2 and ReSe2

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