2007
DOI: 10.1103/physrevlett.98.076802
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Localization in a Quantum Spin Hall System

Abstract: The localization problem of electronic states in a two-dimensional quantum spin Hall system (that is, a symplectic ensemble with topological term) is studied by the transfer matrix method. The phase diagram in the plane of energy and disorder strength is exposed, and demonstrates "levitation" and "pair annihilation" of the domains of extended states analogous to that of the integer quantum Hall system. The critical exponent nu for the divergence of the localization length is estimated as nu congruent with 1.6,… Show more

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Cited by 160 publications
(204 citation statements)
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“…Namely, at the phase transition there emerges an extended E = 0 state(s) which we associate with the pair annihilation at E = 0 of two extended regions which evolve from the bulk bands. We note that an identical phenomena of pair annihilation had also been previously observed in topological insulator, IQHE and topological superconductor systems 14,21 . This system, however, is the first example of a disordered Kitaev model shown to exhibit this sort of physics.…”
Section: Energy Level Statisticssupporting
confidence: 83%
“…Namely, at the phase transition there emerges an extended E = 0 state(s) which we associate with the pair annihilation at E = 0 of two extended regions which evolve from the bulk bands. We note that an identical phenomena of pair annihilation had also been previously observed in topological insulator, IQHE and topological superconductor systems 14,21 . This system, however, is the first example of a disordered Kitaev model shown to exhibit this sort of physics.…”
Section: Energy Level Statisticssupporting
confidence: 83%
“…The computer simulations have already began this process (note that these are all zero-temperature finitesize scaling simulations). [49][50][51][52][53][54][55][56][57][58][59][60] One question that received great attention from these works is if the scaling exponents of the symplectic models at the metal-to-normal insulator and at the metal-to-topological insulator are the same. So far, the answer seems to be affirmative.…”
Section: Introductionmentioning
confidence: 99%
“…This robustness against disorder can be the key to many technological applications, [9][10][11] and because of that, a great deal of effort has been dedicated to understanding the behavior of the topological materials in the presence of disorder. [13][14][15][16][17][18][19][20][21][22][23][24][25][26] One important question, which is still opened for 3D topological insulators, is if the robustness against disorder extends into the strong disorder regime, particularly into the regime where the insulating gap is filled with dense localized spectrum. The theoretical argument based on the time-reversal symmetry is perturbative and therefore it breaks down in this regime.…”
mentioning
confidence: 99%