There have been significant recent developments in the growth of singleâcrystal gallium nitride (GaN) on unconventional templates for largeâarea blue or green lightâemitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and singleâcrystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layerâtransfer onto foreign substrates. Recent progress in lowâtemperature GaNâbased redâgreenâblue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layerâtransfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layerâtransfer technologies are expected to lead to new lighting and display devices with high efficiency and fullâcolor tunability, which are suitable for largeâarea, stretchable display and lighting applications.