“…In contrast, energy migration in inorganic semiconductor-based materials can take place through mechanisms beyond FRET. Except for strongly-quantum-confined systems such as quantum dots or atomically-thin two-dimensional materials which are beyond the scope of this work [25,26], photogenerated electron-hole pairs can be rapidly dissociated at room temperature because of the low exciton binding energy in inorganic semiconductors [27][28][29]. Therefore, energy migration can proceed efficiently via independent electron and hole transfer events, as long as the adjacent semiconductor domains are electronically coupled [30,31] and the driving forces are provided [32,33].…”