2020
DOI: 10.1021/acs.macromol.0c00402
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Leveraging Sequential Doping of Semiconducting Polymers to Enable Functionally Graded Materials for Organic Thermoelectrics

Abstract: With the ability to modulate electronic properties through molecular doping coupled with ease in processability, semiconducting polymers are at the forefront in enabling organic thermoelectric devices for thermal energy management. In contrast to uniform thermoelectric material properties, an alternative route focuses on functionally graded materials (FGMs) where one spatially controls and optimizes transport properties across the length of a thermoelectric material. While primarily studied in the context of i… Show more

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Cited by 33 publications
(34 citation statements)
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References 63 publications
(110 reference statements)
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“…3,4 Sequential doping avoids possible complications that arise if the doped material is poorly soluble in the casting solvent and in some cases may allow for the preservation of some of the structural order present in the pristine semiconductor film. Although widely applied to the p-doping of P3HT [5][6][7][8] and PBTTT, 9,10 there are only few reports of the sequential n-doping of solution-processed polymers. 11 The air-stability of oxidants, hole-transport materials, and their doped combinations often allow for easy handling in air.…”
Section: Introductionmentioning
confidence: 99%
“…3,4 Sequential doping avoids possible complications that arise if the doped material is poorly soluble in the casting solvent and in some cases may allow for the preservation of some of the structural order present in the pristine semiconductor film. Although widely applied to the p-doping of P3HT [5][6][7][8] and PBTTT, 9,10 there are only few reports of the sequential n-doping of solution-processed polymers. 11 The air-stability of oxidants, hole-transport materials, and their doped combinations often allow for easy handling in air.…”
Section: Introductionmentioning
confidence: 99%
“…We calculate side‐chain distance d 100 = 2π/q 100 as a function of FnTCNQ doping time, the result of which is shown in Figure 4(A). Upon introducing FnTCNQ we observe an increase in d 100 for all three dopants due to the intercalation of dopant into the side‐chain spacing, a widely observed phenomenon in polythiophene‐based polymers 17,22,43,49,50 . Specifically, d 100 increases initially from 1.79 nm for neat P3MEET to 1.94 nm, 2.01 nm and 2.06 nm for F1TCNQ, F2TCNQ and F4TCNQ‐doped thin films, respectively.…”
Section: Resultsmentioning
confidence: 76%
“…Figure 1(B) shows a schematic of our home‐built apparatus for controlled vapor doping of polymer thin films in an argon atmosphere glovebox. More details are provided in the methods section and our previous publication 43 …”
Section: Resultsmentioning
confidence: 99%
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“…To avoid the aforementioned drawbacks, different research groups recently exposed undoped conjugated polymer films to dopants to achieve molecular doping, including gasphase or liquid-phase approaches, which we refer to as sequential interfacial doping. [2,[11][12][13] The technique for interfacial doping in solution is to spin coat the dopant directly from the solution onto the precast polymer film.…”
Section: Introductionmentioning
confidence: 99%