Two-dimensional
boron monolayers (i.e., borophene) hold promise
for a variety of energy, catalytic, and nanoelectronic device technologies
due to the unique nature of boron–boron bonds. To realize its
full potential, borophene needs to be seamlessly interfaced with other
materials, thus motivating the atomic-scale characterization of borophene-based
heterostructures. Here, we report the vertical integration of borophene
with tetraphenyldibenzoperiflanthene (DBP) and measure the angstrom-scale
interfacial interactions with ultrahigh-vacuum tip-enhanced Raman
spectroscopy (UHV-TERS). In addition to identifying the vibrational
signatures of adsorbed DBP, TERS reveals subtle ripples and compressive
strains of the borophene lattice underneath the molecular layer. The
induced interfacial strain is demonstrated to extend in borophene
by ∼1 nm beyond the molecular region by virtue of 5 Å
chemical spatial resolution. Molecular manipulation experiments prove
the molecular origins of interfacial strain in addition to allowing
atomic control of local strain with magnitudes as small as ∼0.6%.
In addition to being the first realization of an organic/borophene
vertical heterostructure, this study demonstrates that UHV-TERS is
a powerful analytical tool to spectroscopically investigate buried
and highly localized interfacial characteristics at the atomic scale,
which can be applied to additional classes of heterostructured materials.