Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Liu, Po–Tsun; Tsai, Tzu-I; Chang, T. C.

doi:10.1063/1.1921329

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…The linear relation of ln͑J͒ to the square root of the applied electric field corresponds to Schottky emission or Poole-Frenkel conduction. 17 As shown in Fig. 8b, the k values derived from Schottky emission plot at room temperature correspond relatively well with those obtained from the C-V measurement of the MIS capacitors, while those derived from the Poole-Frenkel mechanism are greater than 20.…”

Section: F230supporting

confidence: 78%

Investigation into the Structural and Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Heo

Kim

2006

J. Electrochem. Soc.

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In this study, we attempted to deposit low dielectric constant a-SiCO:H as a copper diffusion barrier by the plasma-enhanced chemical vapor deposition method using an organosilicon precursor, bis͑trimethylsilylmethane͒ ͑BTMSM, C 7 H 20 Si 2 ͒. The dielectric constant of the a-SiCO:H films increased from 2.54 to 3.25 as the deposition temperature was increased from room temperature to 280°C. The refractive index increased gradually with increasing deposition temperature, indicating that the film has a denser structure as well as a higher dielectric constant at higher deposition temperatures. The Fourier transform infrared and X-ray photoelectron spectroscopy analyses indicated that the chemical structure of the Si atoms in the films changed from the D moiety to the T moiety with increasing deposition temperature. The electrical conduction mechanism of the a-SiCO:H films was determined to be a Schottky emission current in the high field region ͑E Ͼ 0.4 MV/cm͒.

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Section: F230supporting

confidence: 78%

Investigation into the Structural and Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Heo

Kim

2006

J. Electrochem. Soc.

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“…Among the numerous high-energy sources available, low-energy EB (LEEB) of ∼60 kV is one of the most promising for curing, surface modification, and patterning of polymeric materials, SAMs, and sol−gel films. − The characteristic penetration depth of UV light and plasma into materials is only several hundreds of nanometers (<1 μm). , On the other hand, LEEB can supply highly efficient EB energy into films thinner than 30 μm, allowing complete change in chemical structure of relatively thick films. LEEB emits no infrared rays and so does not heat the samples.…”

Section: Introductionmentioning

confidence: 99%

Rapid Micropatterning of Mesoporous Silica Film by Site-Selective Low-Energy Electron Beam Irradiation

Hozumi

Kimura

2008

Langmuir

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Rapid microfabrication of mesoporous silica film at low temperature was achieved with low-energy electron beam (LEEB) irradiation. A mesostructured film (thickness approximately 200 nm), which was prepared through hydrolysis and condensation of tetramethoxysilane in the presence of hexadecyltrimethylammonium chloride, was irradiated with LEEB at 25 kV and 300 microA under pressures of 10 and 1000 Pa. The surfactant molecules can be eliminated completely at temperatures less than 40 degrees C after only 10 min (10 Pa) and 5 min (1000 Pa) of irradiation, resulting in conversion to a highly ordered mesoporous silica film without cracking. The LEEB-irradiated film also showed reasonable chemical resistance toward dilute hydrofluoric acid solution due to sufficient consolidation by cross-linking of silicate networks during the irradiation. The unirradiated regions were etched away preferentially to the irradiated areas; therefore, rapid micropatterning of the mesoporous silica film was possible by area-selective LEEB irradiation followed by chemical etching.

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“…In order to verify the conduction mechanism of a-SiCO:H films at high field region ( E > 0.4MV/cm) , a plot of the leakage current density versus the square root of the applied field was introduced. Linear relation of Ln(J) to the square root of the applied electric field corresponds to Schottky emission or Poole-Frenkel mechanism (14). As shown in Fig.…”

Section: Resultsmentioning

confidence: 89%

The Investigation on the Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Heo

Kim

2006

ECS Trans.

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In this paper, we attempted to deposit low dielectric constant a-SiCO:H as a copper diffusion barrier by PECVD method using a organosilicon precursor, bis-trimethylsilylmethane (BTMSM, C7H20Si2). The dielectric constant of a-SiCO:H films increases from 2.5 to 3.2 with increasing the deposition temperature from room temperature to 280°C. Refractive index gradually increases with deposition temperature, indicating that film has a denser structure as well as a higher dielectric constant. FT-IR and XPS analyses resulted that chemical structure of Si atoms in the films changed from D moiety to T moiety with increasing the deposition temperature. The electrical conduction mechanism of the a-SiCO:H films was determined to be Schottky emission current at high field region (E > 0.4MV/cm).

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Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Cited by 6 publications

References 16 publications

Investigation into the Structural and Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Investigation into the Structural and Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Rapid Micropatterning of Mesoporous Silica Film by Site-Selective Low-Energy Electron Beam Irradiation

The Investigation on the Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

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