LDO regulator with high power supply rejection at 10 MHz

Abstract

A new high-frequency power supply rejection (PSR) improvement technique is presented for a low-dropout (LDO) regulator. The proposed technique utilizes a negative capacitance at the gate of the power transistor to enhance the PSR at high frequencies by neutralizing the effect of parasitic capacitances. The simulation results show that the LDO is able to achieve a PSR of −67.9 dB at 10 MHz.