A. El-Shaer, A. Bakin, A. Che Mofor, J. Stoimenos, B. Pécz, A. Waag
Layer by layer growth of ZnO epilayers on (0001) Al 2 O 3 substrates is achieved by radical-source molecular beam epitaxy. A thin MgO buffer, followed by a low-temperature ZnO buffer was used in order to accommodate the lattice mismatch between ZnO and sapphire. Reflection high-energy electron diffraction intensity was employed for the optimization of the ZnO growth. The surface morphology of the samples was studied with atomic force microscopy. Investigation of the nature of the influence of the MgO buffer l…
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