Lateral complementary transistor structure for the simultaneous fabrication of functional blocks

Lin, Hongchin; Tan, Tianlin; Chang, George; Leest, B. van der; Formigoni, N. P.

doi:10.1109/proc.1964.3437

Cited by 35 publications

(3 citation statements)

References 2 publications

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“…Lateral bipolar transistors can also be fabricated in some bipolar or BiCMOS integrated circuits, e.g., a p-n-p bipolar transistor in a BiCMOS process is usually fabricated as a lateral transistor. Lateral transistors were investigated in the late 1960s [1][2][3][4][5][6]. Lateral bipolar transistors on SOI substrate [7][8][9] have also been reported.…”

Section: Introductionmentioning

confidence: 99%

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Mierzwinski

Kuźmicz

2023

Electronics

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This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only to make field effect transistors but also to make bipolar transistors. Their structures differ in many ways from existing structures of bipolar transistors. The investigations reported here aim to answer the question: can VESTIC-based lateral bipolar transistors be useful as active devices, and can they be made technologically compatible with field effect VESTIC devices? The theoretical studies were followed by the fabrication and measurements of VESTIC-based p-n-p and n-p-n bipolar devices. Although the manufacturing technology available was far from optimal, working bipolar devices were obtained. The results show that VESTIC-based bipolar devices may achieve acceptable parameters if made with state-of-the-art manufacturing technology. The main outcome of the research reported in the paper is that p-n-p and n-p-n bipolar transistors with acceptable parameters may be fabricated, together with field effect devices, in VESTIC-based integrated circuits. As a result, the VESTIC technology could become the new original BiCMOS technology.

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Section: Introductionmentioning

confidence: 99%

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Mierzwinski

Kuźmicz

2023

Electronics

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“…The lateral BJT structure was first proposed in 1964 by Lin using a BJT process [ 10 ]. This special device combines a MOSFET and a BJT, and was developed for various power device applications [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair

Yuan

Zhang

Cao

et al. 2015

Sensors

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An H+-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials. Moreover, the reference electrodes need to be separated from the sensor device in some cases. The proposed device is composed of two gated lateral BJT components, one of which had a silicide layer while the other was without the layer. The two components were operated under the metal-oxide semiconductor field-effect transistor (MOSFET)-BJT hybrid mode, which can be controlled by emitter voltage and base current. Buffer solutions with different pH values were used as the sensing targets to verify the characteristics of the proposed device. Owing to their different sensitivities, both components could simultaneously detect the H+-ion concentration and function as a reference to each other. Per the experimental results, the sensitivity of the proposed device was found to be approximately 0.175 μA/pH. This experiment demonstrates enormous potential to lower the cost of the ISFET-based sensor technology.

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“…In this arrangement, injected minority carriers from the emitter, considered a collector current, flow parallel to the surface, hence the name "lateral transistor." Originally, lateral transistors were conceived as a solution to the problem of producing complementary p-n-p transistors in monolithic functional blocks, using standard n-p-n bipolar integrated cir- transistors made with the more common vertical structure, particularly with respect to the common-emitter current gain (1)(2)(3)(4)(5)(6). The usual approach in the analysis of lateral transistors is to consider injected carriers from an emitter as being made of two independent components: a lateral component, which contributes to the collector current (the useful component), and a vertical component, which is injected into the bulk and does not contribute to transistor action (parasitic component).…”

Section: Introduction Lc I Rcmentioning

confidence: 99%

Lateral transistor structure optimization with respect to current gain

Ristic¹,

Baltes²,

Filanovsky³

et al. 1987

Can. J. Phys.

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An investigation of a novel lateral transistor structure fabricatcd in standard 4 p m complementary metal oxide semiconductor technology without any additional proccssing steps is presented. Inhercnt in thc structure is the potential of modulating the lateral electric field in the neutral base region. An additional characteristic of this structure is thc reduced bottom surface of the emitter, which diminishes the parasitic action of vertically injected carriers. The results show that because of the lateral electric field, the common-emitter static current gain at high currents can bc increased by at lcast an ordcr of magnitude.On prtsente une Ctude de la structure d'un nouveau transistor lattral fabriqut selon la technologie des semi-conducteurs i oxyde de mttal compltmentaire 4 p m standard, sans addition d'aucune autre ttape de prtparation. Le potentiel de moduler le champ tlectrique lattral dans la rtgion neutre de la base est inherent B cette structure. Elle a comrne caracttristique additionnelle une reduction de la surface du fond de l'tmetteur, ce qui diminue l'action parasitique des porteurs injectts verticalement. Les rtsultats montrent que grice au champ tlectrique lattral le gain de courant statique commun-tmetteur i hauts courants peut Ctre augment6 au moins par un ordre de grandeur.[Traduit par la revue]Can. J. Phys. 65, 991 (1987)

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Lateral complementary transistor structure for the simultaneous fabrication of functional blocks

Cited by 35 publications

References 2 publications

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair

Lateral transistor structure optimization with respect to current gain

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