2021
DOI: 10.1002/adfm.202101059
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Laser‐Manufactured Metastable Supranano SnOx for Efficient Electron/Ion Bridging in SnO2‐Graphene Heterostructure Boosting Lithium Storage

Abstract: Robust anchoring of high-capacity nanocrystals (NCs) on porous conductive substrates is of paramount importance but it is challenging for highly efficient energy storage to prevent the weak interfacial interactions, inevitable aggregation, and sluggish charge transfer, due to the technical hurdles of constructing heterostructures with firm electron/ion bridging. Herein, a facile and highefficiency liquid-phase laser manufacturing strategy to guarantee the covalent bonding of ultrafine NCs on conductive substra… Show more

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Cited by 25 publications
(17 citation statements)
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“…Experimentally, we achieve the synthesis of amorphous tin oxides (A-SnO x ) for pre-bonding by a modified procedure of laser manufacturing in liquid. It was reported in our previous work that crystalline SnO x could be generated from the irradiation of a non-focused pulsed laser beam (1064 nm, 10 Hz, 10 ns) [ 8 ], while in present study we placed polished Sn foil in thiourea aqueous solution upon laser irradiation. As schematically illustrated in Fig.…”
Section: Resultsmentioning
confidence: 95%
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“…Experimentally, we achieve the synthesis of amorphous tin oxides (A-SnO x ) for pre-bonding by a modified procedure of laser manufacturing in liquid. It was reported in our previous work that crystalline SnO x could be generated from the irradiation of a non-focused pulsed laser beam (1064 nm, 10 Hz, 10 ns) [ 8 ], while in present study we placed polished Sn foil in thiourea aqueous solution upon laser irradiation. As schematically illustrated in Fig.…”
Section: Resultsmentioning
confidence: 95%
“…2 c and S1). Different from the case of laser irradiation of Sn in water [ 8 ], the irradiation of Sn in thiourea aqueous solution allows for oxidization of Sn upon both H 2 O and H 2 S, where both Sn-O and Sn-S bonds could form in the oxidation of Sn vapor. However, the generated Sn-S bond was eventually replaced by Sn-O bond owing to its lower binding energy (467 kJ mol −1 ) than that of Sn-O (528 kJ mol −1 ).…”
Section: Resultsmentioning
confidence: 99%
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