Laser induced nucleation and growth of polycrystalline silicon

Toet, D.; Eitel, Simon H.; Santos, P. V.; Heintze, M.

doi:10.1016/0022-3093(96)00076-2

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…This shift cannot be due to size effects, since an increase of the crystallization intensity, which leads to larger grains, leaves the peak position ͑and its width͒ unaffected. Moreover, atomic force microscopy showed that lasercrystallized seeds in a-Si films grown by plasma-enhanced chemical vapor deposition ͑CVD͒ contained grains of about 0.5 m. 9 The shift is attributed to a biaxial tensile stress X s in the plane of the film. 11 This stress arises from ͑i͒ the higher density of the laser-crystallized material with respect to the a-Si, ͑ii͒ the difference in thermal contraction between the laser-crystallized material and the substrate.…”

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Growth of polycrystalline silicon on glass by selective laser-induced nucleation

Toet

Koopmans

Santos

et al. 1996

Applied Physics Letters

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Polycrystalline silicon on glass substrates was grown by a method based on the creation of nucleation sites using laser crystallization of amorphous silicon followed by thermal annealing at temperatures below 600 °C. Annealing induces the crystallization of the material around the seeds, eventually leading to coalescence of adjacent domains before spontaneous nucleation sets in. Micro-Raman spectroscopy shows that the seeds experience a tensile stress, which causes a radial birefringence in the surrounding amorphous silicon, detected by optical anisotropy measurements. We conjecture that this stress facilitates the crystallization of the material around the seed upon thermal annealing.

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confidence: 99%

Growth of polycrystalline silicon on glass by selective laser-induced nucleation

Toet

Koopmans

Santos

et al. 1996

Applied Physics Letters

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“…Hence the generated diffracted waves along the surface interfere with the incident waves [143,145], modifying the surface morphology when the interference is sufficiently strong. as-grown and laser treated 400 nm thick a-Si thin films treated with the energy densities of 294 mJ/cm 2 , 380 mJ/cm 2 ,439 mJ/cm 2 and 507 mJ/cm 2 .…”

Section: Crystallization Of A-si and Formation Of Nanodome Structurementioning

confidence: 99%

Si nanostructures based solar cells

Lei¹

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To address the current problems of increasing energy shortages and serious environmental pollutions, clean energy option such as photovoltaic has been actively explored. Currently, the single crystalline silicon (Si) solar cell dominates the photovoltaic market. Unfortunately, its high cost has seriously impeded its competition with fossil fuels and prevented its widespread application. To address the cost issue,

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Fundamentals for the formation and structure control of thin films

Kumomi

Shi

2002

Handbook of Thin Films

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Laser induced nucleation and growth of polycrystalline silicon

Cited by 9 publications

References 6 publications

Growth of polycrystalline silicon on glass by selective laser-induced nucleation

Growth of polycrystalline silicon on glass by selective laser-induced nucleation

Si nanostructures based solar cells

Fundamentals for the formation and structure control of thin films

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