Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

Abstract

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

Understanding the Growth Kinetics of Graphene on Cu and Fe2O3 Using Inductively-Coupled Plasma Chemical Vapor Deposition

“…The I D /I G ratio increased to 0.47 when the growth temperature was reduced to 700°C. Nevertheless, the I D /I G ratio was significantly lower than ratios previously reported for graphene on oxides (Bi et al, 2012;Chen et al, 2011;Fanton et al, 2011;Song et al, 2012). The I 2D /I G ratio of ~1 of graphene grown at 900°C and 1,000°C suggests the formation of few-layer graphene (Nang & Kim, 2012;Reina et al, 2009).…”

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

“…Therefore, the metal‐catalyst free direct CVD growth of graphene on crystalline Al 2 O 3 (sapphire) was demonstrated by many researchers. Chen et al28 reported single crystal hexagonal and dodecagonal patterns on sapphire substrate using CH 4 as a precursor via near equilibrium CVD technique, whereas Song et al83 reported the growth of single layer graphene on sapphire substrate using CH 4 as a precursor via metal catalyst‐free APCVD. Zhang et al24 studied uniform graphene films on sapphire substrate using CH 4 as a precursor by PECVD technique.…”

A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment

“…[20][21][22][23][24][25][26][27][28][29][30][31][32] The first approach involves directly growing graphene by metal-catalyst-free CVD on dielectric substrates such as SiO2, [20][21][22] Al2O3, [23][24] BN, [25][26][27] and SrTiO3. [28] However, producing high-quality, large-scale graphene using this method is difficult.…”