2021
DOI: 10.1038/s41467-021-23489-y
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Large intrinsic anomalous Hall effect in SrIrO3 induced by magnetic proximity effect

Abstract: The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which i… Show more

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Cited by 38 publications
(38 citation statements)
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References 65 publications
(75 reference statements)
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“…The sign of ρ xy AHE is always positive and opposite to that which has been recently discussed for SIO/manganite heterostructures. [ 34 ] Because of the insulating nature of LCO, the AHE unambiguously originates from the conductive SIO layer. This in turn indicates that underlying mechanism strongly relies on the related magnetic ion, Ir, which inherently shows a large SOC.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…The sign of ρ xy AHE is always positive and opposite to that which has been recently discussed for SIO/manganite heterostructures. [ 34 ] Because of the insulating nature of LCO, the AHE unambiguously originates from the conductive SIO layer. This in turn indicates that underlying mechanism strongly relies on the related magnetic ion, Ir, which inherently shows a large SOC.…”
Section: Resultsmentioning
confidence: 99%
“…Nevertheless, theoretical analysis indicates strong enhancement of BC due to magnetic monopoles induced at avoided band crossings in the presence of strong SOC and magnetic order. [34] Adv. Mater.…”
Section: Electronic Transport and Magnetism In Siomentioning
confidence: 99%
See 1 more Smart Citation
“…2(d), indicating that the observed AHE is closely related to the PMA of LSMIO composite films. We note that interfacial magnetism and AHE has been intensively studied in LSMO/SIO superlattices and heterostructures 21,[40][41][42][43][44][45][46] . Our observed AHE is quite different from that the AHE reported in ref.…”
Section: Resultsmentioning
confidence: 99%
“…Our observed AHE is quite different from that the AHE reported in ref. 41, where a large AHE is originated from SIO layers due to magnetic proximity effect. Our AHE stems from the reflection of the spin current at the interface where an out-of-plane component (mz) of the LSMIO magnetization rotates the spin orientation of the spin current and generates a transverse voltage via the inverse spin Hall effect (ISHE).…”
Section: Resultsmentioning
confidence: 99%