2001
DOI: 10.1016/s0921-5107(01)00635-3
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Large current density and anodization time needed for strong photoluminescence in porous silicon

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Cited by 7 publications
(3 citation statements)
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“…For both sets of the as-grown PS sample, single PL peak appeared around 695 nm, which is similar to the reported value [9,10]. The oxygen content of the film was very low which is evident from the single-peak PL band of PS [11]. The PL spectra of PS coated with LaF 3 layer of three different thicknesses with an uncoated PS sample has been compared and shown in Figure 3.…”
Section: Results and Analysissupporting
confidence: 81%
“…For both sets of the as-grown PS sample, single PL peak appeared around 695 nm, which is similar to the reported value [9,10]. The oxygen content of the film was very low which is evident from the single-peak PL band of PS [11]. The PL spectra of PS coated with LaF 3 layer of three different thicknesses with an uncoated PS sample has been compared and shown in Figure 3.…”
Section: Results and Analysissupporting
confidence: 81%
“…This means that the particles are confined into lower dimension and the probability of the recombination of the electrons and holes is higher in low dimensional structures. This will lead to a higher efficiency and higher energy (Ohmukai et al , 2001).…”
Section: Resultsmentioning
confidence: 99%
“…It has also been reported by Arafa et al [15] that polyaniline immobilized onto metallurgical pSimPs is highly promising for the development of an inexpensive and flexible photovoltaic system. These types of porous micro-particles were prepared via numerous methods, such as electrochemical etching [16,17] (the most familiar method), stain-etching in a hydrofluoric acid-based solution [18,19] and by a metal-assisted chemical etching method [20,21]. Other techniques have been used to form pSi by thermal annealing and etching of silicon gels and silica nanoparticles, at 900°C under an argon atmosphere [22,23].…”
Section: Introductionmentioning
confidence: 99%