Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties

Abstract

In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In 2 Te 3 film via chemical vapor deposition (CVD) methods. The characterizations show the large area of CVD-grown few-layer α-In 2 Te 3 . This method guarantees the precise control of thickness down to few layers and large area preparation. The magnetoresistance (MR) properties of few-layer In 2 Te 3 was investigated from 2 to 300 K and its MR stability under long exposure to ambient air was studied for the first time. Few-layer of α-In 2 Te 3 shows a positive MR and the largest transverse MR was observed to about 11% at 2 K and a high stability of MR to long time exposure in air up to 21 weeks.

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

“…[ 48 ] The XPS spectra of Te 3d are shown in Figure 4b. From the Te 3d data, two peaks situated at 576.96 and 586.88 eV are well assigned to Te 3d 5/2 and 3d 3/2 , [ 49,50 ] respectively. It is realized that upon the variation in the dopant amount, no significant change in the peak position is noticed for all the Te 3d spectra.…”

“…[ 53 ] Again Figure 4d shows the high‐resolution spectra of In 3d core‐level spectra. The binding energies at 445.14 and 452.48 eV are well assigned to In 3+ 3d 5/2 and 3d 3/2 , [ 50,54 ] respectively. As shown in Figure 4d, the splitting of In 3d 5/2 peaks at a binding energy of 440.7 and 444.5 eV indicates the existence of In(0) (440.7 eV) and In (III) (444.5 eV).…”

1T-Phase Dirac Semimetal PdTe2 Nanoparticles for Efficient Photothermal Therapy in the NIR-II Biowindow

“…The Pd 3d spectra in Figure c are, respectively, attributed to Pd 3d 5/2 (336.5 eV) and 3d 3/2 (341.8 eV) of the Pd–Te bond. For Te 3d spectra (Figure d), the binding energies of 573.4 and 583.8 eV are associated with Te 3d 5/2 and 3d 3/2 of PdTe 2 , respectively, while those of 576.8 and 587.2 eV are due to the tellurium oxidation on the surface . Notably, the intensity of the Te–Pd bond is significantly enhanced by exfoliation, suggesting more Pd–Te bond exposure on the surface induced by the crystal crush of bulk and formation of PTN …”

“…For Te 3d spectra (Figure 1d), the binding energies of 573.4 and 583.8 eV are associated with Te 3d 5/2 and 3d 3/2 of PdTe 2 , 47 respectively, while those of 576.8 and 587.2 eV are due to the tellurium oxidation on the surface. 48 Notably, the intensity of the Te−Pd bond is significantly enhanced by exfoliation, suggesting more Pd−Te bond exposure on the surface induced by the crystal crush of bulk and formation of PTN. 49 The Raman spectra of bulk PdTe 2 (Figure S3) show typical two peaks of the 1T-phase at 75.9 and 133.6 cm −1 , which can be corresponded to the in-plane E g mode and the out-of-plane A 1g mode, respectively.…”

Two‐Dimensional Metal Telluride Atomic Crystals: Preparation, Physical Properties, and Applications

“…In addition to 2D WTe 2 and MoTe 2 , there are still many 2D transition metal tellurides grown by CVD methods. Our group [ 95 ] reported a large‐area growth of few‐layer In 2 Te 3 thin films by CVD methods. This method ensures the large‐area growth and accuracy control of the thickness down to few atomic layers.…”