Lack of charge offset drift is a robust property of Si single electron transistors

Hourdakis, E.; Wahl, Jeremy; Zimmerman, Neil M.

doi:10.1063/1.2841659

Cited by 13 publications

(16 citation statements)

References 9 publications

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“…In contrast, as we have previously shown, 10,13,14 in at least one class of Si-based SET transistors, there is no apparent charge offset drift ͓⌬Q 0 ͑t͒ ഛ 0.01e͔. This fact forms one of the advantages of Si-based SET devices, and one of our aims is to determine how to attain such a lack of long-term drift in the metal-based SET devices.…”

Section: Motivationmentioning

confidence: 87%

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Zimmerman

Huber

Simonds

et al. 2008

Journal of Applied Physics

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A common observation in metal-based ͑specifically, those with AlO x tunnel junctions͒ single-electron tunneling ͑SET͒ devices is a time-dependent instability known as the long-term charge offset drift. This drift is not seen in Si-based devices. Our aim is to understand the difference between these, and ultimately to overcome the drift in the metal-based devices. A comprehensive set of measurements shows that ͑1͒ brief measurements over short periods of time can mask the underlying drift, ͑2͒ we have not found any reproducible technique to eliminate the drift, and ͑3͒ two-level fluctuators ͑TLFs͒ in the metal-based devices are not stable. In contrast, in the Si-based devices the charge offset drifts by less than 0.01e over many days, and the TLFs are stable. We also show charge noise measurements in a SET device over four decades of temperature. We present a model for the charge offset drift based on the observation of nonequilibrium heat evolution in glassy materials, and obtain a numerical estimate in good agreement with our charge offset drift observations. We conclude that, while the Si devices are not perfect and defect-free, the defects are stable and noninteracting; in contrast, the interacting, unstable glasslike defects in the metal-based devices are what lead to the charge offset drift. We end by suggesting some particular directions for the improvement in fabrication, and in particular, fabrication with crystalline metal-oxide barriers, that may lead to charge offset drift-free behavior.

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Section: Motivationmentioning

confidence: 87%

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Zimmerman

Huber

Simonds

et al. 2008

Journal of Applied Physics

Self Cite

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“…Given this slight dependence on architecture one might think that the overall stability of devices might be the product of some specific steps in the fabrication. This has been directly addressed in the literature, most directly in reference [47], where devices were fabricated in different foundries. It was found that the stability of all-silicon devices is a robust property of the materials.…”

Section: Silicon-based Devicesmentioning

confidence: 99%

“…It was found that the stability of all-silicon devices is a robust property of the materials. Regardless of how the devices are fabricated, even devices with relatively poor performance (gate leakage and unintentional barriers) exhibit excellent charge offset stability 100 times better than that of metal-based devices [47].…”

Section: Silicon-based Devicesmentioning

confidence: 99%

Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO 2 -based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications.

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“…The electron pump used in this study displayed, overall, a remarkable level of stability over many cooldowns and handling procedures. The stability of Coulomb blockade features of silicon single-electron devices is already well-known 17,18 , and we discovered that this stability carries onto high-precision electron pumping. The measurements at MIKES and Aalto showed that a rapid characterisation procedure could yield a pump current accurate to a part per million, on a measurement timescale of roughly 2 days.…”

Section: Discussionmentioning

confidence: 82%

Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility

et al. 2020

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A silicon electron pump operating at the temperature of liquid helium has demonstrated repeatable operation with sub-ppm accuracy. The pump current, approximately 168 pA, is measured by three laboratories, and the measurements agree with the expected current ef within the uncertainties which range from 0.2 ppm to 1.3 ppm. All the measurements are carried out in zero applied magnetic field, and the pump drive signal is a sine wave. The combination of simple operating conditions with high accuracy demonstrates the possibility that an electron pump can operate as a current standard in a National Measurement Institute. We also discuss other practical aspects of using the electron pump as a current standard, such as testing its robustness to changes in the control parameters, and using a rapid tuning procedure to locate the optimal operation point.

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Lack of charge offset drift is a robust property of Si single electron transistors

Cited by 13 publications

References 9 publications

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Stability of Single Electron Devices: Charge Offset Drift

Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility

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