Kilovolt, Nanosecond, and Picosecond Electric Pulse Shaping by Using Optoelectronic Switching

Amari, Saad El; Kenaan, Mohamad; Merla, Caterina; Vergne, Bertrand; Arnaud‐Cormos, Delia; Lévêque, Philippe; Couderc, Vincent

doi:10.1109/lpt.2010.2073458

Cited by 44 publications

(13 citation statements)

References 15 publications

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“…Manuscript In this letter, the accurate measurement of the resistance evolution of a PCSS is presented. The PCSS is operating under kilovolt switching in order to generate nanosecond and picosecond electric pulses with various profiles, as previously reported [12]. The precise value of the semiconductor resistance during the switching process is determined.…”

Section: Introductionmentioning

confidence: 99%

“…1 shows the setup for the experimental characterization of the PCSS resistance. The shaping pulse generator, based on the frozen wave generator principle, is composed of a photoconductive semiconductor coupled with a capacitor which constitutes the energy storage system [12], [13]. The PCSS is a high-voltage silicon rectifier diode in a semitranslucent glass axial package.…”

Section: Introductionmentioning

confidence: 99%

“…The value is given by the following expression: (1) where and represent the real part of the impedance of the generator and the load. In this setup, all components are designed to operate with a 50 impedance [12]. The efficiency, , is defined by the ratio of the output voltage and the half bias voltage.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Amari

Angelis²,

Arnaud‐Cormos³

et al. 2011

IEEE Photon. Technol. Lett.

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In this letter, an experimental and quantitative study on the resistance behavior of a photoconductive semiconductor switch (PCSS) is reported. The study of the PCSS behavior is important for an accurate integration in a nanosecond pulse shaping generator. The effect of the bias voltage and the optical pulse energy on the switching efficiency is presented. The shift of the PCSS absorption threshold under the bias voltage is also described. The minimum resistance reached by the silicon semiconductor during the temporal switching is 3.8 for 4-kV bias voltage and 48-J optical energy.Index Terms-High voltage, nanosecond and picosecond pulse generator, optical energy, photoconductive switch resistance, voltage-switching efficiency.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Amari

Angelis²,

Arnaud‐Cormos³

et al. 2011

IEEE Photon. Technol. Lett.

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“…The pulses are produced by a generator based on optoelectronic switching triggered by a solid-state laser [15][16][17]. The incident and reflected pulses at the input of the delivery system are measured through a 3-port high-voltage tapoff connected to a 12-GHz oscilloscope.…”

Section: Time-domain Characterizationmentioning

confidence: 99%

Open Transverse ElectroMagnetic (TEM) cell as applicator of high-intensity nsPEFs and electro-optic measurements

Kohler

Vernier

et al. 2012

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

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To expose biological cells or tissues to nanosecond pulsed electric fields of high intensity (>>kV/cm) and subnanosecond rise time, broadband exposure system with high-voltage handling capabilities and compatible with the tools of biologists are needed. To deliver subnanosecond pulses to a biological target, a hyperband antenna has been reported. In this study, we propose to use a Transverse ElectroMagnetic (TEM) cell. We characterize the system experimentally and numerically with Gaussian-like pulses of about 1.2 ns and 1.8 kV amplitude. The results are compared with those obtained using a classical electroporation cuvette, a typical delivery system to expose cell suspensions to ultrashort pulsed electric fields.

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“…The main benefits of these technologies consist in their miniaturization and parallelization capabilities, as well as real-time observation in the case where transparent materials are used for the device fabrication [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Study of Intra Organelle Nanoporation of Multilayer Dense Osteoblast Cell

Sarkar¹,

Mahapatra²,

Ghosh³

2014

IJCA

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This research paper represents the theoretical and experimental study of intra organelle nano poration of multi layer osteoblast cell .It is observed that the Pico pulse has the remarkable response for nano pores generation on the intra organelle and chemicals are entered into the cell. The reported study encourage that the efficiency of nanoporation can be control by the specification of micro chip. It is also exposed that the key parameter of nanoporation such as intra organelle voltage, pore radius, pore density, pressure, surface tension and ion uptake are externally controlled by user defined hybrid 3D micro chip.

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Kilovolt, Nanosecond, and Picosecond Electric Pulse Shaping by Using Optoelectronic Switching

Cited by 44 publications

References 15 publications

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Open Transverse ElectroMagnetic (TEM) cell as applicator of high-intensity nsPEFs and electro-optic measurements

Study of Intra Organelle Nanoporation of Multilayer Dense Osteoblast Cell

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