MRS Proc. 2000 DOI: 10.1557/proc-610-b1.2 View full text
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H.-J. Gossmann, C. S. Rafferty, P. Keys

Abstract: AbstractWe analyze the requirements that the International Technology Roadmap for Semiconductors (ITRS) implicitly imposes on the two-dimensional source/drain (SD) dopant profile and translate the results into implant parameters (energy, dose, peak concentration). We do this by determining the voltage drop that the SD current develops across the three main (exclusive of the channel) resistive components in the current path: the spreading resistance in the extension region; the metal-semiconductor contact; and …

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