Junction Temperature Estimation for IGBT Modules Applied to EVs Based on High-Frequency Signal Sweeping Technique

Chen, Cuili; Pickert, Volker; Tsimenidis, Charalampos C.; Al‐Greer, Maher

doi:10.1109/itec-ap.2018.8433287

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2019

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“…In [26], it is proposed to estimate the junction temperature for an IGBT by using a high frequency and low power signal injected into the gate-emitter terminals of the IGBT. The frequency response permits the estimation of the junction temperature.…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Pleşca

2019

Energies

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Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results.

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Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Pleşca

2019

Energies

View full text Add to dashboard Cite

show abstract

Junction Temperature Estimation for IGBT Modules Applied to EVs Based on High-Frequency Signal Sweeping Technique

Cited by 1 publication

References 11 publications

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

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