Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing

Abstract

The fundamental design goals for a high-performance logic technology, maximizing speed while minimizing power, drive the design of the junctions and in turn the requirements on dopant placement and activation. In the early nodes implant energies of tens of keV and furnace anneals sufficed. Scaling into the deep submicron regime brought transient enhanced diffusion to the forefront and necessitated its control. This gave rise to rapid thermal annealing and low energy implants. The requirements of current high-performance logic technologies can only be satisfied with careful defect engineering and a further reduction in thermal budget at increased annealing temperatures: flash or laser annealing. Those almost diffusionless anneals make implant precision, such as angle control, imperative. Simultaneously, productivity requirements of implanters add molecular clusters to the list of implant species and lead for certain applications to a switch from beam line to plasma implantation.

Control of Methylene Blue Photo-Oxidation Rate over Polycrystalline Anatase TiO2 Thin Films via Carrier Concentration

“…In other words, successful band engineering requires significant defect engineering both within the semiconductor bulk and at surfaces and interfaces. The importance of such defect engineering for photocatalysis has been recognized previously, , but standard practices developed in the microelectronics industry ,,,− have diffused relatively slowly into the design of photocatalysts . The present work represents a modest step in that direction.…”

Defect engineering in semiconducting oxides: Control of ZnO surface potential via temperature and oxygen pressure

“…The method described here for using adsorption P and T to control V S for defect engineering is distinct from, but complementary to, another adsorption‐based mechanism for controlling defect behavior. This other mechanism involves controlled saturation of surface dangling bonds, and has been demonstrated for sulfur on and nitrogen on Si . In both cases, defect injection and/or annihilation rates were varied by 1‐2 orders of magnitude through adsorption of submonolayer concentrations of the controlling element—to the extent that the majority species responsible for carrying self‐diffusional flux actually changed.…”

“…In semiconductors, atomic‐scale native defects such as vacancies and interstitial atoms affect the performance of microelectronic devices, sensors, catalysts, photocatalysts, photo‐active devices, and photovoltaic cells . Accordingly, considerable effort has been expended in recent years to manipulate the type, concentration, spatial distribution, and mobility of such species—an endeavor termed “defect engineering.” Examples of longstanding methods include specially designed heating protocols (time, maximum temperature, heating, and cooling rates), introduction of foreign atoms, ion bombardment protocols, and amorphization/recrystallization. These approaches focus mostly on applications in Si‐based microelectronics, with numerous reviews available .…”

“…Accordingly, considerable effort has been expended in recent years to manipulate the type, concentration, spatial distribution, and mobility of such species—an endeavor termed “defect engineering.” Examples of longstanding methods include specially designed heating protocols (time, maximum temperature, heating, and cooling rates), introduction of foreign atoms, ion bombardment protocols, and amorphization/recrystallization. These approaches focus mostly on applications in Si‐based microelectronics, with numerous reviews available . Use of defect engineering outside of Si‐based microelectronics is less extensive, with applications mainly for ion implantation in III–V compound semiconductors for devices or metal oxide nanoparticles for photocatalysts .…”

Suppression of boron diffusion in deep submicron devices

“…Unfortunately, the high diffusivity of boron in Si due to the transient enhanced diffusion leads to limited usefulness of the boron halo implants in narrow n-FET devices, as reported by Gossman. 3 One of the ways to reduce boron diffusion is to use a carbon co-implant, as was reported earlier by Felch et al 4 and Lee et al 5 using secondary ion mass spectrometry (SIMS). However, these results provide no information about dopant diffusion in the lateral dimension, which impacts the optimization of the device performance.…”