Junction devices based on sulfonated polyaniline

Narasimhan, Murali K.; Hagler, M.O.; Cammarata, Vince; Thakur, M.

doi:10.1063/1.120965

Cited by 40 publications

(16 citation statements)

References 14 publications

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“…[20±24] SPANs are of interest because of their unique electroactive properties, self-doping, thermal stability, characteristic optical properties, and water-solubility. SPANs have potential applications in rechargeable batteries, [25,26] light-emitting diodes, [27] junction devices, [28] and in the electrochemical control of electrolyte acidity and enzyme activity. [29] However, because the sulfonic acid functionality is a strong electron-withdrawing group, the conductivity of SPAN (10 ±3 to 10 ±7 S cm ±1 ) is much lower than that of PANI (10 ±1 to 10 S cm ±1 ).…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Properties of a Water‐Soluble Single‐Walled Carbon Nanotube–Poly(m‐aminobenzene sulfonic acid) Graft Copolymer

Zhao

Haddon

2004

Adv Funct Materials

271

164

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Poly(m‐aminobenzene sulfonic acid) (PABS), was covalently bonded to single‐walled carbon nanotubes (SWNTs) to form a water‐soluble nanotube–polymer compound (SWNT–PABS). The conductivity of the SWNT–PABS graft copolymer was about 5.6 × 10–3 S cm–1, which is much higher than that of neat PABS (5.4 × 10–7 S cm–1). The mid‐IR spectrum confirmed the formation of an amide bond between the SWNTs and PABS. The 1H NMR spectrum of SWNT–PABS showed the absence of free PABS, while the UV/VIS/NIR spectrum of SWNT–PABS showed the presence of the interband transitions of the semiconducting SWNTs and an absorption at 17 750 cm–1 due to the PABS addend.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Properties of a Water‐Soluble Single‐Walled Carbon Nanotube–Poly(m‐aminobenzene sulfonic acid) Graft Copolymer

Zhao

Haddon

2004

Adv Funct Materials

271

164

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“…Sulfonated polyaniline (SPAN), which is particularly a p-type semiconductor, represent a class of self-doped conducting polymers and a derivative of PANI, has received a great interest in recent years, because of its unique electroactive physical properties, enhanced process ability and potential industrial applications [20][21][22]. This material is environmentally stable over a wide range of temperatures.…”

Section: Introductionmentioning

confidence: 99%

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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This article reports the effect of n-type GaAs substrate orientation, namely (100), IntroductionEssentially conducting polymers, such as polyaniline (PANI), sulfonated polyaniline (SPAN), poly(p-phenylene-vinylene), polypyrrole, polyacetylene, polythiophene, etc., are promising semiconductors materials with confirmed technological potential due to their unique optical and electrical properties [1]. Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8] As it is well known, the crystallographic orientation of the substrate has a significant effect on incorporation of impurities and defects and consequently on optical and electronic properties of III-V materials [28]. The ideality factor n and barrier height (BH) as well as the electrical characteristics are fundamental parameters of a Schottky barrier diode (SBD) and these give an indication about the quality of the Schottky interface. The SBD parameters must be determined over a broad range of temperatures because the analysis of the current-voltage (I-V) characteristics of the SBD measured only at room temperature does not provide accurate information about the conduction mechanism and the barrier nature created at metal semiconductor interface in order to understand these phenomena and determine precisely the parameters of the Schottky diodes. Chand et al. [29] and Hardikar et al.[30] analysed the experimental currentvoltage data which revealed that there is an increase in the ideality factor and a decrease in the zero-bias barrier height with decreasing temperature. Consequently, the ideality factor and the barrier height established from forward I-V characteristics are found to be temperature dependent. This confirms that the Schottky barrier height is inhomogeneous in nature at the interface. This behaviour has been successfully described on the basis of the thermionic emission mechanism with Gaussian distribution of the barrier heightTo fabricate a hybrid organic/inorganic semiconductor heterojunction device with the aim to obtain specific optical and electrical properties on the bases of their doping levels, a thin organic film is deposited onto the surface of a conventional inorganic semiconductor substrate. This can be done by simple and inexpensive methods such as 4 spin coating used for thin film deposition at room temperature. Recently, a new technique of SPAN films preparation has been developed by Yang et al. [32].In this paper, we report on the fabrication and electrical characterization of Au/SPAN/GaAs heterojunctions grown on three different substrate orientations, namely n-type GaAs (100), (311)A and (311)B. We have investigated the effect of the substrate orientation on the heterojunction parameters ...

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“…A considerable interest in the fabrication of ZnO/organic hybrid structure has also been developed for solar cell, photodiode, photovoltaic and photoelectrochemical applications [17][18][19][20]. Polyaniline (PANI) is potential p-type semiconducting material for use in junction devices [21,22]. It exhibits high electrical conductivity on doping and can be used in rechargeable batteries, electrochromic displays, electronic switches, gas sensors and photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%