MRS Proc. 2000 DOI: 10.1557/proc-610-b4.2 View full text
L. S. Robertson, P. N. Warnes, K. S. Jones, S. K. Earles, M. E. Law, D. F. Downey, S. Falk, J. Liu

Abstract: AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ i…

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